Supercharge Your Innovation With Domain-Expert AI Agents!

A method for testing and screening Schottky chip IV bad curves

A screening method and chip technology, applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc., can solve the problems of reduced pass rate of batch products, increased customer production costs, and reduced product production efficiency

Active Publication Date: 2022-05-27
YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] This kind of detection method cannot fully achieve the effect of abnormal non-flow out, which eventually leads to a reduction in the pass rate of batch products. Customers need to pre-check before use, which increases customer production costs and reduces product production efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for testing and screening Schottky chip IV bad curves
  • A method for testing and screening Schottky chip IV bad curves

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The present invention is as Figure 1-2 As shown, a method for testing and screening poor IV curves of Schottky chips includes the following steps:

[0055] 1) Place the Schottky chip to be tested on the test plate of the probe station, and automatically adjust the level of the Schottky chip through the probe station (easy to locate the first Schottky chip);

[0056] 2) Locate the first die on the Schottky chip through the preset image of the probe station (there are several prepared dies on the Schottky chip);

[0057] 3) The test disc moves up to contact with the test probes on the probe station;

[0058] 4) Determine whether the test probe (tungsten needle) is in contact with the first die through the 1mA current given by the test box on the probe station;

[0059] 4.1) If the probe station shows that the test probe is in good contact with the first die;

[0060] 4.11) The test box gives a reverse current of 50uA, tests the reverse voltage, and the test box record...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for testing and screening Schottky chip IV failure curves, relating to a chip testing process. The test box gives a reverse current of 50uA, 100uA and 500uA, test the reverse voltage, and record the reverse voltage values ​​as C, A and B respectively; then the test box gives a reverse current of 1mA and a forward current of 10mA , 100mA forward current, 1A forward current, 3A forward current, 5A forward current; calculate the absolute value of |A‑B|, set its absolute value to D; when the value D is greater than 1, IV Bad curve When the value D is less than 1, there is no abnormality in the IV curve; the steps of the present invention can quickly and automatically perform a full inspection on the SBD chip, reducing the probability of abnormal curves when used on the client side.

Description

technical field [0001] The invention relates to a chip testing process, in particular to a method for testing and screening the IV bad curve of a Schottky chip. Background technique [0002] After the SBD (Schottky chip) backside process is completed, it is necessary to enter the probe station for electrical testing, screen out the electrical defective products, and make corresponding marks; during the testing process, different currents and voltages need to be set to test The corresponding parameters are obtained, and the purpose of filtering is achieved through calculation. [0003] At present, the 370A curve tester is used to detect the IV curve, and the detection steps are: [0004] 1. Place the SBD chip on the stage of the manual probe station, and turn on the stage vacuum; [0005] 2. Adjust the reverse voltage of the 370A detector to 10V or 20V (according to the product type), and adjust the reverse current to 20uA; [0006] 3. Click the die on the chip with the de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 郑晓波赵晓非王毅
Owner YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More