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Method for improving adhesion between photoresist and wafer

A technology of photoresist and adhesion, which is applied in the field of photolithography technology, can solve problems such as HDMS unevenness, wafer surface contamination, and increase the viscosity-increasing cavity unit, so as to reduce the standing wave effect and improve adhesion Effect

Pending Publication Date: 2021-04-23
陕西彩虹新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, it is necessary to modify the glue developing machine and increase the viscosity-increasing chamber unit
And if the spin-coating method is used for adhesion enhancement treatment, it is particularly easy to cause contamination of the wafer surface or uneven coating of HDMS

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: The specific operation process is as follows: first, place the photoresist sample in a constant temperature water bath at 23°C, and clean the wafer with ultrapure water to remove residues on the wafer surface; then bake the wafer , set the baking temperature to 100-120°C, and the baking time to 60-180s to increase the adhesion between the photoresist and the substrate; then cool the wafer to 23°C to increase the uniform film thickness during the coating process Uniformity; then set the program to manually spray the propylene glycol methyl ether acetate solution in advance, and finally coat the wafer with photoresist; then use the temperature of 90-110°C to bake the substrate before exposure, and the baking time is 2min- 3min, increase the solvent volatilization in the photoresist, and also better increase the adhesion between the wafer and the photoresist; then perform exposure treatment on the coated wafer; then perform post-exposure baking on the exposed ...

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PUM

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Abstract

The invention provides a method for improving adhesion between photoresist and a wafer; the method is characterized by comprising the following steps: pre-baking a wafer cleaned by ultrapure water, placing a photoresist sample in a water bath, and setting a program to manually spray a solvent solution corresponding to the photoresist in advance before the photoresist is coated, absorbing a certain amount of photoresist to coat the baked wafer; carrying out exposure processing on the wafer coated with the photoresist; performing post-exposure baking on the exposed wafer; carrying out room temperature cooling treatment on the wafer baked after exposure; finally, developing the wafer. According to the method for improving the adhesion between the photoresist and the wafer provided by the invention, the wafer is pre-baked firstly, so that the surface of the wafer can be changed from hydrophilicity to hydrophobicity, and the adhesion between the photoresist and the wafer is improved.

Description

Technical field: [0001] The invention relates to the technical field of photolithography technology, in particular to a method for improving the adhesion between photoresist and wafer. Background technique: [0002] In the semiconductor manufacturing process, lithography technology is one of the key technologies of integrated circuits, and it is an important economic factor in the entire product manufacturing. The lithography cost accounts for 35% of the entire manufacturing cost. Lithography is also an important reason for the development of integrated circuits in accordance with Moore's Law. Without the advancement of lithography technology, it is impossible for integrated circuits to enter the deep submicron and then nanometer era. The quality of the gluing technology also has an important impact on the photolithography process. The traditional photolithography process includes three main processing steps: coating, exposure, and development. First, the photoresist is ev...

Claims

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Application Information

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IPC IPC(8): G03F7/38G03F7/40G03F7/30G03F7/20G03F7/16H01L21/027
Inventor 马阳阳张东宏李宝军
Owner 陕西彩虹新材料有限公司