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Manufacturing method of shield gate trench MOSFET

A manufacturing method and shielding grid technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Pending Publication Date: 2021-04-30
GUANGZHOU CANSEMI TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of manufacturing method of shielded gate trench MOSFET, to solve the above-mentioned problem of improving the breakdown voltage of shielded gate trench MOSFET

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  • Manufacturing method of shield gate trench MOSFET
  • Manufacturing method of shield gate trench MOSFET
  • Manufacturing method of shield gate trench MOSFET

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Embodiment Construction

[0036] As mentioned in the background art, shielded gate trench MOSFETs manufactured by conventional technologies in the industry have a problem of low breakdown voltage.

[0037] For details, please refer to Figure 1a to Figure 1c , in the conventional technology, the manufacturing method of the shielded gate trench MOSFET generally includes the following steps: first, a sinker 10' is provided, a first trench 101' and a second trench 102' are formed in the substrate, and then a second trench 102' is formed. A dielectric layer 201', the first dielectric layer 201' at the bottom of the first trench 101' and the second trench 102' has an outward recess 201a', and then an electrode 31' is formed in the first trench 101' And a shield gate 32' is formed in the second trench 102'.

[0038] Wherein, the recessed portion 201a' at the bottom of the first dielectric layer 201' is due to the relatively high density of silicon atoms there, and the slow entry rate of oxygen during the re...

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Abstract

The invention provides a manufacturing method of a shield gate trench MOSFET, which comprises the following steps: providing a substrate, and forming a plurality of first trenches and second trenches in the substrate; forming a first dielectric layer which covers the side walls and the bottoms of the first groove and the second groove, the bottom of the first dielectric layer being provided with an outward concave part; forming a second dielectric layer through an HDP CVD process, wherein the second dielectric layer covers the bottom of the second trench and fills the concave part; and forming an electrode in the first trench and forming a shield gate in the second trench. In the invention, the second dielectric layer is formed by HDP CVD to cover the bottoms of the first trench and the second trench and fill the concave parts, so that weak points at the bottoms can be eliminated, and the breakdown voltage of the shielding gate trench MOSFET is improved; besides, the breakdown voltage of the shield gate trench MOSFET can be improved under the condition that the overall thickness is not increased, so that the shield gate trench MOSFET can be manufactured in a more miniaturized manner.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor integrated circuits, in particular to a method for manufacturing a shielded gate trench MOSFET. Background technique [0002] Due to the charge coupling effect of the shielded gate trench structure, a horizontal depletion layer is introduced on the basis of the vertical depletion of the traditional trench MOSFET, and the electric field of the device is changed from a triangular distribution to an approximately rectangular distribution. In the case of epitaxial specifications with the same doping concentration, the device can obtain a higher breakdown voltage, so this structure is widely used. [0003] In order to obtain a higher breakdown voltage, the industry usually forms a thicker first dielectric layer on the inner wall (including the side wall and the bottom) of the trench to insulate and block. However, due to the crystal orientation of the silicon crystal, the density o...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/423
CPCH01L29/66621H01L29/4236
Inventor 陈成运黄康荣宁润涛
Owner GUANGZHOU CANSEMI TECH INC
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