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Optical system, metrology apparatus and associated method

A technology of optical system and measuring equipment, applied in the field of optical system

Pending Publication Date: 2021-04-30
ASML NETHERLANDS BV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

While various sources can be used to generate beams of SXR or EUV radiation, there are various challenges associated with manipulating the radiation beams in a manner that meets certain criteria

Method used

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  • Optical system, metrology apparatus and associated method
  • Optical system, metrology apparatus and associated method
  • Optical system, metrology apparatus and associated method

Examples

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Embodiment Construction

[0048] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (for example, having a wavelength of 365, 248, 193, 157 or 126 nm), extreme ultraviolet radiation (EUV, For example with a wavelength in the range of about 5 to 100 nm) and soft X-ray radiation (SXR, for example with a wavelength in the range of about 5 to 100 nm).

[0049] The terms "reticle", "mask" or "patterning device" as used herein may be broadly interpreted to refer to a general patterning device which may be used to impart a patterned cross-section to an incident radiation beam, said The patterned cross-section corresponds to the pattern to be created in the target portion of the substrate. The term "light valve" may also be used in such contexts. Besides typical masks (transmissive or reflective, binary, phase-shifted, hybrid, etc.), examples of other such patterning devices include programmable mirror arrays and program...

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Abstract

There is described an optical system (400) for focusing a beam of radiation (B) on a region of interest of a substrate in a metrology apparatus. The beam of radiation comprises radiation in a soft X-ray or Extreme Ultraviolet spectral range. The optical system comprises a first reflector system (410) and a second reflector system (412). Each of the first and second reflector systems (410, 412) comprises a finite-to-finite Wolter reflector system. The optical system (400) is configured to form, on the region of interest, a demagnified image (414) of an object (416) comprising an apparent source of the beam of radiation (B).

Description

[0001] Cross References to Related Applications [0002] This application claims priority from European application 18195638.4 filed on September 20, 2018, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to optical systems and associated methods for (but not exclusively) metrology devices. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. Lithographic apparatus may be used, for example, in integrated circuit (IC) fabrication. A lithographic apparatus can, for example, project a pattern (also often referred to as a "design layout" or "design") at a patterning device (such as a mask) onto a radiation-sensitive material (anti- etchant) layer. [0005] To project a pattern onto a substrate, a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can b...

Claims

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Application Information

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IPC IPC(8): G03F7/20G01N21/956G01N21/88G01N21/95G02B17/02
CPCG01N21/9501G01N21/956G03F7/70616H05G2/008G03F7/70925H05G2/005
Inventor P·D·范福尔斯特
Owner ASML NETHERLANDS BV
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