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Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability

A technology of thermal stability and extreme ultraviolet light, which is applied in the field of extreme ultraviolet lithography, can solve the problem of high reflectivity in the out-of-band band, and achieve the effect of suppressing reflectivity and improving thermal stability

Inactive Publication Date: 2013-05-08
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

The reflectance of the multilayer film at 13.5nm can reach 70%, but its out-of-band reflectance is very high (up to 60%); the outermost layer of the multilayer film is Si, which is easy to form when in contact with air. SiO2

Method used

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  • Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability
  • Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability
  • Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0018] Such as figure 1 As shown, a novel multilayer film that improves extreme ultraviolet spectral purity and thermal stability, the novel multilayer film is a periodic multilayer film in which Si layers 2 and Mo layers 3 are alternately plated on a substrate 1, and includes A thermal stability layer 4, the thermal stability layer 4 is fabricated on a periodic multilayer film in which Si layers 2 and Mo layers 3 alternate.

[0019] The preferred layer period of the periodic multilayer film in which Si layer 2 and Mo layer 3 alternate is 40-60, and one layer corresponds to a Si layer and the Mo layer adjacent to the Si layer, wherein in the periodic multilayer film, Si The thicknesses of the Mo layer and the Mo layer were not changed. Due to the limited depth of action of the radiation in this spectral region, a further increase in the numb...

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Abstract

The invention discloses a novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability and belongs to the filed of extreme ultraviolet lithography. The novel multilayer film is a periodic multilayer film, and substrate of the periodic multilayer film is plated with a silicon (Si) layer and a molybdenum (Mo) layer in sequence, wherein the Si layer and the Mo layer are alternant. The novel multilayer film further comprises a thermal stability layer which is manufactured on the periodic multilayer film, wherein the Si layer and the Mo layer are alternant on the periodic multilayer film. The novel multilayer film capable of improving the extreme ultraviolet spectrum purity and the thermal stability can guarantee that reflectivity losses of extreme ultraviolet wavebands can be ignored and restrains reflectivity of wavebands out of band effectively on the condition that appearances of films are not changed, optical elements are not increased, radial directions of light are not changed and processing steps are not added in addition through the periodic multilayer film with an alternant Si layer and a Mo layer being plated with a silicon nitride (Si3N4) thermal stability layer.

Description

technical field [0001] The invention belongs to the field of extreme ultraviolet lithography, and in particular relates to a novel multilayer film which improves the purity of extreme ultraviolet spectrum and has good thermal stability. Background technique [0002] In the development process of integrated circuits, in addition to integrated circuit design technology, its manufacturing technology plays an increasingly important role, and microfabrication technology plays a decisive role in the development of integrated circuits. Photolithography technology is the core and key of integrated circuit manufacturing technology. The reduction of the line width of semiconductor devices can achieve high integration, high performance and low loss of integrated circuits. The resolution of the lithography system is determined by the working wavelength and numerical aperture. In order to improve the resolution of the lithography system, it is necessary to develop the working wavelength ...

Claims

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Application Information

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IPC IPC(8): G02B5/08G03F7/20
Inventor 金春水祝文秀匡尚奇
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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