31results about How to "Suppressed reflectivity" patented technology

To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness.

A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.

The present invention relates to an antireflection article of which the first surface has sufficient abrasion resistance and can suppress reflectance to a low level throughout the visible light region, and a display device. The present invention relates to an antireflection article that has light transmittance, in which a plurality of convex portions are disposed on a first surface positioned at a visible side and a second surface opposite to the first surface, the average gap of the convex portions is 400 nm or less, the ratio (H1/W1) of the height H1 of the convex portions and the width W1 of the bottoms of the convex portions is 1.3 or more, in the first surface, and the ratio (H2/W2) of the height H2 of the convex portions and the width W2 of the bottoms of the convex portions is larger than the ratio (H1/W1), in the second surface.

An insulating film is formed on a main surface of a substrate. A conductive film is formed on the insulating film. A lower layer resist film, an intermediate layer, an anti-reflection film and an upper layer resist film are formed on the conductive film. A focal point at a time of exposure is detected by detecting a height of the upper layer resist film. In detecting the focal point at the time of exposure, a focal point detection light is radiated on the upper layer resist film. After detecting the focal point, the upper layer resist film is exposed and developed thereby to form a resist pattern. With the resist pattern as a mask, the intermediate layer and the anti-reflection film are patterned, and the lower layer resist film is developed. With these patterns as a mask, the conductive film is etched thereby to form a gate electrode.

A mirror for reflecting extreme ultraviolet light (EUV) comprising: a substrate layer; and an upper layer above the substrate layer, that reflects EUV wavelengths and refracts longer wavelengths, said upper layer being dense and hard carbon having an Sp2 to Sp3 carbon bond ratio of 0 to about 3 and a normal incidence EUV mirror comprising an optical coating on an uppermost surface which permits transmission of EUV and protects the surface from environmental degradation, said coating being dense and hard and having an Sp2 carbon bond ratio of 0 to about 3 and a thickness of 0.1 to about 5 nanometers. The invention also includes EUV mirror systems protected by a dense carbon layer and includes a multilayer EUV reflecting system having an out of band absorbing layer.

A thin film for reflective film or semi-reflective film comprising a matrix of silver or silver alloy and, dispersed therein, a compound phase of at least one member selected from among aluminum, magnesium, tin, zinc, indium, titanium, zirconium, manganese and silicon nitrides, oxides, composite oxides, nitroxides, carbides, sulfides, chlorides, silicides (excluding silicon), fluorides, borides, hydrides, phosphides, selenides and tellurides. In this thin film, in addition to the above aluminum, etc., there may be dispersed at least one member selected from among silver, gallium, palladium and copper nitrides, oxides, composite oxides, nitroxides, carbides, sulfides, chlorides, silicides, fluorides, borides, hydrides, phosphides, selenides and tellurides. This thin film as deterioration of its reflectance is low even in long-term use can prolong the service life of various equipment having the thin film applied thereto, such as optical recording medium or display, and is also applicable to semi-reflective/semi-transmissive films for use in optical recording medium.

While illuminating light is separated into a first wavelength component illuminating light and second and third wavelength component illuminating lights by a dichroic mirror, the first illuminating light is reflected off a first liquid crystal display element to form a first wavelength component image light which is then reflected off or passed through the polarizing surface of a first polarizing beam splitter, whereas one of the second and third wavelength component illuminating lights has its polarizing surface 90°-converted by a ½ phase difference plate, the other one is passed through the plate without having its polarizing surface converted, the second and third wavelength components are separated from each other by a second polarizing beam splitter and respectively reflected off second and third liquid crystal display elements to obtain second.

The invention relates to an angle broadband extreme ultraviolet multi-layer film having a spectrum purification function, and belongs to the extreme ultraviolet photoetching technology field. The angle broadband extreme ultraviolet multi-layer film having the spectrum purification function is, from bottom to top, constituted by a substrate, an aperiodic MoSi alternately-arranged multi-layer film, a first spectrum absorption layer, a spacing layer, and a second spectrum absorption layer. The first spectrum absorption layer, the spacing layer, and the second spectrum absorption layer are used to form a spectrum purification structure layer. The multi-layer film is provided with a spectrum purification function. The angle broadband extreme ultraviolet multi-layer film is advantageous in that the spectrum purification layer is disposed on the aperiodic angle broadband extreme ultraviolet multi-layer, and then the spectrum purification function of inhibiting the deep ultraviolet waveband can be realized, and the extreme ultraviolet waveband reflectivity is basically not affected, and then the extreme ultraviolet waveband reflectivity can be reduced; the structure of the multi-layer film is simple, and the production method is simple.

A sheet material includes a resin layer (4) containing a binder (2) and polypyrrole particles (3), an electroless plating film (7) provided on the side of one main surface (4a) of the resin layer (4)and including first electroless plating films (5) and a second electroless plating film (6), and a transparent base material (8) provided on the side of the other main surface (4b) of the resin layer(4). At least part of the polypyrrole particles (3) has an exposure surface (3a) exposed from the main surface (4a) of the resin layer (4), and the exposure surface (3a) is dispersed at the main surface (4a) of the resin layer (4). The first electroless plating films (5) are arranged at the main surface surface (4a) of the resin layer (4) in a mode round the exposure surfaces (3a) of the polypyrrole particles (3). The second electroless plating film (6) is arranged in a mode of covering the first electroless plating films (5), and the main surface (6a) of the second electroless plating film (6) as a recess portion (6r) corresponding to the first electroless plating films (5).

Provided is an optical laminate which is capable of exhibiting sufficient luminance and good hue, while suppressing the reflectance in cases where the optical laminate is used in an image display device, and which enables reduction in the cost. An optical laminate according to the present invention comprises a wavelength conversion layer and an absorption layer; this optical laminate does not havea polarizing plate on a surface of the wavelength conversion layer, said surface being on the reverse side of the absorption layer-side surface; the wavelength conversion layer emits light by converting some of the wavelengths of incident light; the absorption layer contains a compound that has an absorption peak within the wavelength range of from 480 nm to 780 nm; the relationship of the average reflectance R1 of the wavelength conversion layer for the wavelength range of from 380 nm to 480 nm and the average reflectance R2 of the wavelength conversion layer for the wavelength range of from490 nm to 600 nm satisfies R2 > R1; and if P1 is the maximum peak value of the reflectance of the absorption layer side of the optical laminate in the wavelength range of from 380 nm to 480 nm and P2is the maximum peak value of the reflectance of the absorption layer side of the optical laminate in the wavelength range of from 490 nm to 600 nm, P2/P1 is from 0.7 to 1.5.

A display device includes a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed in this order from a thin film transistor layer side, and the first electrode includes a first transparent electrode, a reflective metal layer, and a semi-transparent metal layer in this order from the side opposite to the light-emitting layer.

A thin film for a reflection film or a semi-transparent reflection film, which has a compound phase comprising at least one selected from the group consisting of a nitride, an oxide, a complex oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide, a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of gallium, palladium or copper, dispersed in a matrix formed of silver or a silver alloy. The compound phase in the thin film may include at least one compound selected from the group consisting of nitride, oxide, complex oxide, nitroxide, carbide, sulfide, chloride, silicide, fluoride, boride, hydride, phosphide, selenide and telluride of silver. The thin film of the present invention minimizes the deterioration of the reflectance even after a long period of use, and can prolong the life of various devices which use the thin film as a reflection film, such as an optical recording medium and a display. The thin film can be also applied to a semi-reflective/semi-transparent film used in the optical recording medium.