Angle broadband extreme ultraviolet multi-layer film having spectrum purification function

Abstract

The invention relates to an angle broadband extreme ultraviolet multi-layer film having a spectrum purification function, and belongs to the extreme ultraviolet photoetching technology field. The angle broadband extreme ultraviolet multi-layer film having the spectrum purification function is, from bottom to top, constituted by a substrate, an aperiodic MoSi alternately-arranged multi-layer film, a first spectrum absorption layer, a spacing layer, and a second spectrum absorption layer. The first spectrum absorption layer, the spacing layer, and the second spectrum absorption layer are used to form a spectrum purification structure layer. The multi-layer film is provided with a spectrum purification function. The angle broadband extreme ultraviolet multi-layer film is advantageous in that the spectrum purification layer is disposed on the aperiodic angle broadband extreme ultraviolet multi-layer, and then the spectrum purification function of inhibiting the deep ultraviolet waveband can be realized, and the extreme ultraviolet waveband reflectivity is basically not affected, and then the extreme ultraviolet waveband reflectivity can be reduced; the structure of the multi-layer film is simple, and the production method is simple.

Description

technical field [0001] The invention relates to the technical field of extreme ultraviolet lithography, in particular to an angular broadband extreme ultraviolet multilayer film with the function of spectral purification. Background technique [0002] Extreme ultraviolet lithography technology refers to an advanced micro-nano manufacturing technology that uses a 13.5nm wavelength light source to realize the photolithography process. The use of the extreme ultraviolet light source makes the lithography line width greatly reduced, which can greatly improve the integration of chip manufacturing, thereby reducing the size of the chip and reducing the energy consumption of the chip. At present, the international mainstream lithography process is completed by using 193nm ArF laser light source supplemented by multiple exposure technology, which can realize the 14nm line width lithography process. However, the complex process increases the cost of chip manufacturing, and at the sa...

AI Technical Summary

Problems solved by technology

Among them, the spectral purification technology of microstructure is limited by the processing method, the cost is extremely high, and the success rate is low. At present, most of them are theoretical designs.

Images