A kind of preparation method of large size tial base alloy seed crystal
A large-size, base alloy technology, which is applied in the field of preparation of TiAl-based alloy seed crystals, can solve the problems of small seed crystal size and unstable growth of columnar crystals, and achieve the effects of stable growth, improved melting effect, and easy operation
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Embodiment 1
[0024] The preparation method of a kind of large-sized TiAl-based alloy seed crystal that the present invention proposes comprises the following steps:
[0025] S1. Prepare seed crystal raw materials respectively, including 0-grade sponge titanium, high-purity aluminum, aluminum-tungsten master alloy, and high-purity silicon. Among them, Al is 46 at.%, W is 0.5 at.%, and Si is 0.5 at.%. The rest is Ti;
[0026] S2, adding the seed crystal raw material prepared in step S1 into a water-cooled copper crucible vacuum induction melting furnace;
[0027] S3. Vacuumize the melting chamber in the vacuum induction melting furnace to 3×10 -3 Below Pa, feed argon to 0.05Pa into the vacuum induction melting furnace;
[0028] S4. Under the protection of argon, add 0.07% of the modified product of the total mass of the seed crystal raw material into the melting furnace;
[0029] The modification is prepared by the following method: in the first step, Na is prepared in a mass ratio of 3:1...
Embodiment 2
[0034] The preparation method of a kind of large-sized TiAl-based alloy seed crystal that the present invention proposes comprises the following steps:
[0035] S1. Prepare seed crystal raw materials respectively, including 0-grade sponge titanium, high-purity aluminum, aluminum-tungsten master alloy, and high-purity silicon. Among them, Al is 47 at.%, W is 1 at.%, Si is 0.5 at.%, and the rest for Ti;
[0036] S2, adding the seed crystal raw material prepared in step S1 into a water-cooled copper crucible vacuum induction melting furnace;
[0037] S3. Vacuumize the melting chamber in the vacuum induction melting furnace to 1×10 -3 Pa below, into the vacuum induction melting furnace into argon to 0.03Pa;
[0038] S4. Under the protection of argon, add 0.09% of the modified product of the total mass of the seed crystal raw material into the melting furnace;
[0039] The modification is prepared by the following method: in the first step, Na is prepared in a mass ratio of 4:1 ...
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