A light-emitting diode with variable graphics and its preparation method

A technology of light-emitting diodes and diodes, applied in the field of optoelectronics, can solve the problems of low utilization rate of light sources, and achieve the effects of reasonable step design, high practicability and low power consumption

Active Publication Date: 2021-12-07
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since most of the light emitted by the light source is blocked by the reticle, only a small amount of light is emitted, so the utilization rate of the light source is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode with variable graphics and its preparation method
  • A light-emitting diode with variable graphics and its preparation method
  • A light-emitting diode with variable graphics and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] S1: Take substrate 1, grow N-type ohmic contact layer 2, N-type confinement layer 3, active region 4, P-type confinement layer 5 and P-type ohmic contact layer 6 sequentially on the surface of substrate 1 by MOCVD method to obtain epitaxy piece;

[0052] S2: Place the epitaxial wafer with the N side down and the P side up in the electron beam evaporation table, and evaporate the ITO film 7 on the P-type ohmic contact layer 6, and the ITO film 7 covers the entire surface of the epitaxial wafer; the thickness of the ITO film 7 is

[0053] S3: Place the epitaxial wafer P on the suction cup of the coating machine, coat the photoresist, expose the light-emitting pattern of the light-emitting area A, and the light-emitting pattern of the light-emitting area B; then develop and etch, at this time on the surface of the ITO film 7 forming a light emitting region A and a light emitting region B, and the surfaces of the light emitting region A and the light emitting region B are...

Embodiment 2

[0062] S1: Take substrate 1, grow N-type ohmic contact layer 2, N-type confinement layer 3, active region 4, P-type confinement layer 5 and P-type ohmic contact layer 6 sequentially on the surface of substrate 1 by MOCVD method to obtain epitaxy piece;

[0063] S2: Place the epitaxial wafer with the N side down and the P side up in the electron beam evaporation table, and evaporate the ITO film 7 on the P-type ohmic contact layer 6, and the ITO film 7 covers the entire surface of the epitaxial wafer; the thickness of the ITO film 7 is

[0064] S3: Place the epitaxial wafer P on the suction cup of the coating machine, coat the photoresist, expose the light-emitting pattern of the light-emitting area A, and the light-emitting pattern of the light-emitting area B; then develop and etch, at this time on the surface of the ITO film 7 forming a light emitting region A and a light emitting region B, and the surfaces of the light emitting region A and the light emitting region B are...

Embodiment 3

[0073] S1: Take substrate 1, grow N-type ohmic contact layer 2, N-type confinement layer 3, active region 4, P-type confinement layer 5 and P-type ohmic contact layer 6 sequentially on the surface of substrate 1 by MOCVD method to obtain epitaxy piece;

[0074] S2: Place the epitaxial wafer with the N side down and the P side up in the electron beam evaporation table, and evaporate the ITO film 7 on the P-type ohmic contact layer 6, and the ITO film 7 covers the entire surface of the epitaxial wafer; the thickness of the ITO film 7 is

[0075] S3: Place the epitaxial wafer P on the suction cup of the coating machine, coat the photoresist, expose the light-emitting pattern of the light-emitting area A, and the light-emitting pattern of the light-emitting area B; then develop and etch, at this time on the surface of the ITO film 7 forming a light emitting region A and a light emitting region B, and the surfaces of the light emitting region A and the light emitting region B are...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a light-emitting diode with variable patterns and a preparation method thereof. The diode comprises an epitaxial wafer, an ITO film is vapor-deposited on the upper surface of the epitaxial wafer, and several light-emitting regions and etching regions are arranged on the ITO film. Each of the light-emitting regions is provided with a P-face electrode correspondingly, and the adjacent P-face electrodes are insulated and separated; an insulating layer is deposited on the surface of the etching region, and the end surface of the epitaxial wafer away from the ITO film is An N-side electrode is vapor-deposited. The invention has simple structure, reasonable step design, and the prepared light-emitting diode can be used alone without cooperating with the reticle, and can be used as the required pattern for emitting, which ensures simple structure and high efficiency while improving the utilization rate of the light source. The advantage of low power consumption; at the same time, the light-emitting pattern of the diode prepared by the technical solution has variability, and the light-emitting pattern can be transformed according to the distance between the reflective sight and the target, which has high practicability.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a light-emitting diode with variable patterns and a preparation method thereof. Background technique [0002] The reflective sight is a kind of optical sight without magnification. It uses the principle of spherical reflection to make the reflected light incident on the eyes parallel to the observer's eyes, so that the observer's eyes can be seen without being on the central axis of the lens. Seeing the red dot can improve shooting accuracy when moving targets or body movement. The light source part of the reflective sight currently includes LED / LD light source, isotope radiation light source and so on. [0003] The isotope radiation source uses the visible light radiated by a radioactive element as the light source. Although its lifespan is very long, the cost is relatively high. The LED / LD light source is to place a circular or other patterned reticle in front of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/08H01L33/14H01L33/36F41G1/00
CPCF41G1/00H01L33/005H01L33/08H01L33/14H01L33/36H01L2933/0016
Inventor 吴向龙闫宝华汤福国王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap