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Light emitting diode and manufacturing method thereof

A technology of light-emitting diodes and light-emitting units, which is applied in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices, etc., can solve the problems of poor heat dissipation, low thrust, and small electrode area.

Pending Publication Date: 2021-05-07
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrode area of ​​the flip-chip LED chip is small due to the shrinkage of the metal electrode (Bonding pad), especially the Mini-LED. The size of the Mini-LED currently produced has reached 3mil×5mil, and the size will be further reduced in the future. The gap usually requires 15~50μm, so the size of the electrode is limited, which is not enough to cover the solder paste area during package die bonding, which will easily cause the solder paste 160 to overflow to the side of the chip or the P and N electrodes during the die bonding process. between, such as Figure 32 shown, causing a short circuit
Furthermore, the limited solder paste contact area usually also leads to low thrust, resulting in poor heat dissipation, poor high temperature and high humidity characteristics, etc.

Method used

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  • Light emitting diode and manufacturing method thereof
  • Light emitting diode and manufacturing method thereof
  • Light emitting diode and manufacturing method thereof

Examples

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Embodiment 1

[0034] This embodiment discloses the following flip-chip LED chip, as shown in Figure 1(a), which includes the following stacked layers: a transparent substrate 210, a light-emitting epitaxial stack, an insulating layer 230, a first electrode 241 and a second electrode. Two electrodes 242 . The LED chip can be a small-sized LED chip with a smaller horizontal area, for example, it can have a thickness of about 62500 μm 2 The following horizontal cross-sectional area, which in turn can have about 900μm 2 Above and about 62500μm 2 The horizontal cross-sectional area below. For example, the LED chip may have dimensions of 230 μm×120 μm or 120 μm×80 μm or 100 μm×60 μm or 50 μm×40 μm. However, the horizontal length and vertical length of the LE chip in the embodiment are not limited to the above content.

[0035] The details of each structural stack layer are described below.

[0036] Wherein, as shown in FIG. 1(a), the transparent substrate 210 may be a growth substrate for th...

Embodiment 2

[0058] image 3 and Figure 4 Another flip-chip LED chip implemented in accordance with the present invention is shown. Different from Embodiment 1, the outer periphery of the first surface 210A of the transparent substrate 210 has a step 211, and the step 211 has a third surface 210D between the first surface 210A and the second surface 210B, and connects the first The side wall 210E of the surface and the third surface, the first electrode 241A and / or the second electrode 242 extend to the step 211, at least partially covering the side wall 210E and the third surface connecting the first surface and the third surface 210D. The distance from the third surface 210D to the first surface 210A is preferably 10-40 μm, such as 20-30 μm, and the distance from the third surface to the second surface is preferably 10-60 μm, such as 30-50 μm. By providing a step 211 on the outer periphery of the transparent substrate 210 and extending the first electrode and / or the second electrode ...

Embodiment 3

[0071] In the LED chip supported by a transparent substrate, after the transparent substrate is thinned, the LED chip is usually cut by means of implicit cutting and splitting. For an approximately 62500µm 2 A small-sized LED chip with a horizontal cross-sectional area below, for example, an LED chip can have a size of 230 μm×120 μm or 120 μm×80 μm or 100 μm×60 μm or 50 μm×40 μm. The size of the remaining cutting track is limited, and the cutting edge distortion and even cutting edge chipping often occur during the splitting process. Figure 11 It shows a kind of hidden cutting and splitting formation Figure 31 The physical photo map of the LED chip shown. The gray and white part 110A1 of each LED chip is the surface of the transparent substrate exposed around the light-emitting mesa 120 in the LED chip. This area reserves a cutting line with a certain width for cutting processes such as laser hidden cutting and splitting. The cutting line passes through the cutting process....

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Abstract

The invention discloses a light emitting diode and a manufacturing method thereof. In some embodiments, the light emitting diode comprises a transparent substrate having a first surface and a second surface opposite to each other, and a sidewall connecting the first surface and the second surface; a light-emitting table top which is formed on the first surface of the transparent substrate and comprises a light-emitting epitaxial laminated layer, wherein the light-emitting epitaxial laminated layer comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are stacked from the first surface of the transparent substrate; a supporting layer which is formed on the outer periphery of the light-emitting epitaxial laminated layer, wherein a plane is formed by the supporting layer and the light-emitting table top, and the cross sectional area of the plane is not smaller than that of the first surface of the transparent substrate; a first electrode disposed on the plane and electrically connected to the first conductive type semiconductor layer; and a second electrode disposed on the plane and electrically connected to the second conductive type semiconductor layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flip-chip light emitting diode and a manufacturing method thereof. Background technique [0002] Light emitting diode (light emitting diode, referred to as LED) is a semiconductor device that uses energy released by carrier recombination to form light, especially the flip-chip LED chip, because of its low energy consumption, long life, energy saving and environmental protection, etc. more and more widely. As a new technology with broad market prospects, small-sized LEDs have attracted special attention in the past two years. Among them, Micro-LEDs without transparent substrate support are currently difficult to commercialize on a large scale in a short period of time due to uncertain technical routes and high costs. Mini-LEDs supported by transparent substrates have already begun to be used in LCD backlights and small-pitch RGB display products. [0003] With the conti...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/20H01L33/38H01L21/78
CPCH01L27/156H01L33/20H01L33/385H01L33/382H01L21/78H01L2933/0016
Inventor 何安和林素慧王锋夏章艮詹宇洪灵愿
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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