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Self-excited drive and power conversion circuit based on gan HEMT device

A technology for converting circuits and power, applied in the direction of converting DC power input to DC power output, output power conversion devices, instruments, etc., can solve the problems of unfavorable product power density, large junction capacitance, etc., and achieve the expansion of application power level and reduction The effect of small size and reduced system application cost

Active Publication Date: 2022-04-08
扬州江新电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that due to the large junction capacitance of the traditional Si-based MOS tube, after weighing loss, cost, EMI and other factors, its operating frequency is generally only between 30kHz-100kHz, which is not conducive to improving the power density of the product

Method used

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  • Self-excited drive and power conversion circuit based on gan HEMT device
  • Self-excited drive and power conversion circuit based on gan HEMT device
  • Self-excited drive and power conversion circuit based on gan HEMT device

Examples

Experimental program
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Effect test

Embodiment 1

[0036] This self-excited drive and power conversion circuit based on GaN HEMT devices includes: start-up circuit, power conversion circuit, protection circuit, Zener diode Dz1, isolated feedback network, self-excited drive and cycle-by-cycle current detection circuit, drive buffer, output rectifier circuit;

[0037] The start-up circuit is composed of a resistor Rsta, one end is connected to the positive line of the power input, and the other end is connected to the cathode of the Zener diode Dz1, Rsta is the high-voltage start-up resistor of Q1, generally set to 680kΩ-3MΩ;

[0038] The power conversion circuit is composed of the winding Np of the transformer, the main power tube Q1 and the feedback function tube Q2. Q1 is an enhanced GaN HEMT device, the gate of which is connected to the cathode of the Zener diode Dz1, and the source is connected to the anode of the Zener diode Dz1. And grounded, the terminal with the same name of the winding Np is connected to the input posi...

Embodiment 2

[0049] The structure of this embodiment is basically the same as that of Embodiment 1, the difference is that the drive buffer includes resistors R101, R102, R103, R104, R106, NOT gates U101A, U101C, U101D, DC blocking capacitors C101, C102, Zener diodes Dz101, Dz102, and C1 pass the driving signal to the NOT gate U101A after being divided by R101, R102. After the level is reversed, it first passes through the voltage regulator and filter network DZ101, R103, and C101, and then passes through DZ102, R104, and C102 to the next Level NOT gates U101C, U101D, the level is reversed twice and then passed to the gate of Q1 through the resistor R106. The drive buffer generates inverting input and output logic, such as outputting a low level when the input is high.

[0050] The non-inverting and inverting outputs can also be integrated into the same driver buffer, and users can choose to connect according to their needs.

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Abstract

The invention discloses a GaN HEMT device-based self-excited drive and power conversion circuit. The circuit uses a new type of GaN-based HEMT device to increase the operating frequency of the circuit to MHz. The device uses a silicon substrate, and adopts the Q1 and Q2 dual-transistor on-chip design. The two transistors share a wafer, which reduces volume, reduces cost, and improves reliability control. The device also uses an integrated anti-parallel diode structure to improve the reverse conduction characteristics of the device. The circuit passes through the third auxiliary winding Na in the main transformer of the power circuit, and the self-excited drive chamber in the positive feedback mode automatically provides the drive signal for Q1 without the need for a control chip. The drive of Q1 needs to be guaranteed by a special drive buffer circuit for GaN HEMT devices Its reliable drive. The circuit further adopts an integrated high-frequency current cycle-by-cycle detection scheme, which shares a coil with the self-excited drive chamber, which saves the current detection resistor and realizes lossless current detection.

Description

technical field [0001] The invention relates to a self-excited drive and power conversion circuit based on a GaN HEMT device. Background technique [0002] With the rapid development of science and technology and the response to the national low energy consumption strategy, the switching power supply market is showing a trend of continuous growth year by year, and the switching power supply field has higher and higher requirements for efficiency and size. Due to the simple structure, few components, high reliability, and low cost of the flyback converter, coupled with the use of inductive energy storage, the primary current is often large, the transformer leakage inductance is large, and its maximum duty cycle is usually limited Within 0.4, the maximum power of the flyback circuit is greatly limited. Therefore, in the case of low power less than 75W, the flyback converter has developed into a dominant position in the market. There is a special circuit form in the flyback co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/338H02M1/08H02M1/44G01R15/14G01R19/00
CPCH02M3/338H02M1/08H02M1/44G01R15/14G01R19/0092Y02B70/10
Inventor 王玉雯高潮庄紫怡吉怡悦周祥兵陈敦军
Owner 扬州江新电子有限公司
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