a two-dimensional cd 7 te 7 cl 8 o 17 Crystal material and preparation method thereof

Abstract

The invention belongs to the technical field related to nano-semiconductor materials, and discloses a two-dimensional Cd 7 Te 7 Cl 8 o 17 A crystal material and a preparation method thereof, the method comprising the following steps: (1) dividing the reaction zone of a horizontal tube furnace into an upstream low temperature zone, a central temperature zone and a downstream deposition zone, and separating cadmium chloride, tellurium powder and selenium powder Placed in the upstream low temperature area as a precursor; (2) Cadmium chloride, tellurium powder and selenium powder react to generate Cd 7 Te 7 Cl 8 o 17 After crystallizing the material, the Cd 7 Te 7 Cl 8 o 17 The crystalline material is brought into the downstream deposition zone to be deposited on the substrate located in the downstream deposition zone, resulting in two-dimensional Cd 7 Te 7 Cl 8 o 17 crystal material. The present invention uses selenium powder as an oxidant to promote the generation of Cd 7 Te 7 Cl 8 o 17 reaction, to avoid the generation of by-product cadmium telluride, and to realize the controllability of the preparation process. At the same time, the present invention arranges the substrate in the downstream deposition area and keeps a certain distance from the central temperature area, which can avoid the damage of the substrate due to excessive temperature in the central temperature area. end.

Description

technical field [0001] The invention belongs to the technical field related to nano-semiconductor materials, and more specifically relates to a two-dimensional Cd 7 Te 7 Cl 8 o 17 Crystalline materials and methods for their preparation. Background technique [0002] In recent years, the study of 2D ferroelectric materials has attracted extensive interest due to their applications in functional electronics. Two-dimensional materials that are not limited by size effects, have stable layered structures, and lower surface energy are expected to break through the limit of depolarization field enhanced by ultrathin ferroelectrics, thus opening a way for low-dimensional ferroelectrics, enabling ultra-high density Devices become possible and continue Moore's Law. Although a large number of theoretical studies on potential 2D ferroelectric materials have been carried out, and many 2D materials with intrinsic ferroelectricity have been successfully predicted (Nature Materials 202...

AI Technical Summary

Problems solved by technology

However, for two-dimensional Cd 7 Te 7 Cl 8 o 17 The research on crystal materials is rarely reported, mainly limited by the two-dimensional Cd 7 Te 7 Cl 8 o 17 Technical Difficulties in the Synthesis of Crystalline Materials

Cd that has been reported so far 7 Te 7 Cl 8 o 17 The synthesis strategy of crystal materials can only prepare needle-like single crystals through solid-state reactions (Inorganic Chemistry 2006, 45(2), 717), but it is difficult to obtain high-quality two-dimensional structures through further exfoliation. Cd 7 Te 7 Cl 8 o 17 The control of thickness and morphology of crystalline materials limits the understanding of two-dimensional Cd 7 Te 7 Cl 8 o 17 Further research and application of crystal materials

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