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Magnetic random access memory storage unit and magnetic random access memory

A random access memory and storage unit technology, applied in the direction of magnetic field controlled resistors, electrical components, electric solid devices, etc., can solve the problems that are not conducive to device read operation, TMR reduction, etc., to facilitate writing current and improve thermal stability , the effect of increasing the thickness

Pending Publication Date: 2021-05-28
SHANGHAI CIYU INFORMATION TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under the condition of constant thickness, adding or changing the free layer to a material with low saturation magnetic susceptibility will also reduce the TMR, which is not conducive to the read operation of the device.

Method used

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  • Magnetic random access memory storage unit and magnetic random access memory
  • Magnetic random access memory storage unit and magnetic random access memory
  • Magnetic random access memory storage unit and magnetic random access memory

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Embodiment Construction

[0041] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0042] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention discloses a magnetic random access memory storage cell and a magnetic random access memory. The storage cell comprises a reference layer, a barrier layer and a first free layer which are arranged in a stacked manner, a plurality of second free layer groups are further arranged above the first free layer, the plurality of second free layer groups are composed of a lower vertical coupling layer and an upper second free layer, the vertical coupling layer and the second free layer are stacked in sequence in a double-layer structure mode, and a magnetic damping barrier layer is manufactured on the uppermost second free layer; the vertical magnetic coupling layer is used for realizing strong magnetic coupling of the first free layer and the second free layer and providing additional anisotropic sources of a vertical interface; the magnetic damping barrier layer provides an additional source of anisotropy while reducing the magnetic damping coefficient of a film layer.

Description

technical field [0001] The invention relates to the field of magnetic random access memory, in particular to a magnetic random access memory storage unit with multiple free layers and the magnetic random access memory. Background technique [0002] In recent years, Magnetic Random Access Memory (MRAM) using Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) is considered to be the future solid-state non-volatile memory, which has high-speed reading and writing, large capacity and low energy consumption. consumption characteristics. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer (free layer), which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer side, its magnetization direction does not change. [0003] In order to record information in this magnetoresistive element, it is suggested ...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/08H01L27/22
CPCH10B61/00H10N50/80H10N50/10
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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