GaInP/GaAs/AlGaSb three-junction cascade solar cell and preparation method thereof

Abstract

The invention discloses a GaInP / GaAs / AlGaSb three-junction cascade solar cell and a preparation method of thereof. The three-junction cascade solar cell comprises a GaInP / GaAs double-junction cell and an AlGaSb single-junction cell which are matched with GaAs crystal lattices, and the GaInP / GaAs double-junction cell and the AlGaSb single-junction cell which are matched with the GaAs crystal lattices are connected in series by growing a 90-degree mismatch dislocation quantum dot array between GaAs / AlGaSb, so the GaInP / GaAs / AlGaSb three-junction solar cell is formed. The three-junction solar cell is simple in design, and a cell material with relatively low penetration dislocation density can be obtained, so the photoelectric conversion efficiency of the three-junction solar cell can be effectively improved; and on the other hand, the thickness of the three-junction solar cell is far smaller than the thickness of a current cell, so raw material consumption is reduced, cell cost can be greatly reduced, and the three-junction solar cell is widely applied to the civil field.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a GaInP / GaAs / AlGaSb triple-junction cascaded solar cell grown on the basis of a 90° misfit dislocation quantum dot array and a preparation method thereof. The triple-junction solar cell can fully realize the solar spectrum utilization, with higher battery efficiency. Background technique [0002] Solar energy is an inexhaustible clean energy that does not pollute the environment, and is a renewable resource that can be directly developed and utilized. Solar energy does not pollute the environment and does not produce a greenhouse effect in the process of power generation. It is an environmentally friendly and renewable power generation method. [0003] According to the calculation of the Shockley-Quisser model, the conversion efficiency of a triple-junction solar cell with a bandgap combination of 1.90 / 1.44 / 1.04eV can exceed 51% under one sun. In 2013, the small-area GaInP / GaAs / InGaA...

AI Technical Summary

Problems solved by technology

The efficiency of the above cell is lower than the theoretical value. On the one hand, two transitional buffer layers are used, the structure is relatively complex, and parameter design is difficult; on the other hand, because the GaInP top cell is very sensitive to dislocation defects, if the quality of the gradient buffer layer is poor or the growth Introducing defects in the battery will reduce the overall efficiency of the battery

Images