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GaInP/GaAs/InGaAsP/InGaAs four-junction cascade solar battery and preparation method thereof

A solar cell, alxin1-xas technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing battery manufacturing cost and increasing the difficulty of battery manufacturing, and achieve the goal of reducing manufacturing difficulty, improving battery efficiency, and improving mechanical strength Effect

Inactive Publication Date: 2013-11-20
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, wafer-bonded cells often have two main problems: Taking the bonding of GaInP / GaAs and InGaAsP / InGaAs double-junction cells as an example, wafer-bonded cells require two substrates, GaAs and InP, which greatly increases the production cost of the cell ; Second, the bonding part of the wafer-bonded battery needs good ohmic contact and good light transmittance, which brings great challenges to the process and increases the difficulty of making the battery.

Method used

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  • GaInP/GaAs/InGaAsP/InGaAs four-junction cascade solar battery and preparation method thereof
  • GaInP/GaAs/InGaAsP/InGaAs four-junction cascade solar battery and preparation method thereof

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Embodiment approach

[0072] As a preferred embodiment: the GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell grown by the lattice transformation method adopts a GaAs or Ge substrate. Specifically, the AlGaAs or (Al)GaInP sacrificial layer and the N-type GaAs contact layer are first grown on the GaAs or Ge substrate, and then the GaInP cell and the GaAs cell are grown in reverse order, and then the Al x In 1-x As gradient transition layer, the composition of Al changes from 1.00 to 0.48, so that it transitions from GaAs lattice constant to InP lattice constant, and finally grows InGaAsP battery and InGaAs battery, and each sub-cell is connected in series through a tunnel junction.

[0073] The growth preparation method of the GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell includes the following specific steps:

[0074] (1) Growth of GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cells

[0075] (1) growing an AlGaAs or (Al)GaInP sacrificial layer and an N-type doped ...

Embodiment 1

[0093] Embodiment 1: see figure 1 The preparation method of the GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell grown based on the lattice anomaly growth method comprises the following steps:

[0094](1) GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cells are grown by MOCVD method, and its structure is as follows figure 1 Shown:

[0095] (1) On the GaAs substrate 37, grow 0.3 micron AlGaAs or (Al)GaInP sacrificial layer 01, N-type highly doped 0.5 micron GaAs 02 , forming a contact layer for ohmic contact.

[0096] (2) in GaAs 02 The upper growth N-type doping concentration is about 1′10 17 cm -3 0.02 µm Al(Ga)InP 03 As a GaInP cell 29 The window layer, and then grow the N-type doping concentration of about 1′10 18 cm -3 0.07 µm GaInP 04 As a GaInP cell 29 In the emitter region, the re-growth P-type doping concentration is about 1′10 17 cm -3 0.7 µm GaInP 05 As a GaInP cell 29 the base area;

[0097] (3) Growth P-type doping conc...

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Abstract

The invention discloses a GaInP / GaAs / InGaAsP / InGaAs four-junction cascade solar battery and a preparation method thereof. The solar battery comprises a GaInP / GaAs double-junction battery matched with GaAs crystal lattices and an InGaAsP / InGaAs double-junction battery matched with InP crystal lattices, wherein the two double-junction batteries are connected in series through growing a gradual change transition layer by crystal lattice variation, and the gradual change transition layer comprises an AlxIn1-xAs gradual change transition layer, wherein x is 1 to 0.48. The preparation method comprises the following steps that in a process of adopting the crystal lattice variation method for forming the GaInP / GaAs double-junction battery matched with the GaAs crystal lattices and the InGaAsP / InGaAs double-junction battery matched with the InP crystal lattices, and the two double-junction batteries are connected in series through growing the gradual change transition layer by an In ingredient linear gradual progress and / or step progress method. The four-junction cascade solar battery has the band gap combinations being 1.90eV, 1.42eV, 1.03eV and 0.73eV, the sufficient utilization on the solar spectrum can be realized, the current mismatch among all sub batteries and the heat energy loss in the photoelectric conversion process can be reduced, further, the battery efficiency is improved, in addition, the preparation method is simple, and the cost is low.

Description

technical field [0001] The present invention relates to a solar cell and a preparation process thereof, in particular to a GaInP / GaAs / InGaAsP / InGaAs four-junction cascaded solar cell grown based on a lattice anomaly method and a preparation method thereof. The full use of the spectrum has a high battery efficiency. Background technique [0002] In the field of solar cells, the GaInP / GaAs / Ge triple-junction solar cell is the most researched and technically mature system. The highest conversion efficiency of this material system is 32-33% under one sun. However, there is still a major problem in this system, which is restricted by lattice matching. The Ge battery in the three-junction battery covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction batteries. Due to the three-junction batteries connected in series Due to constraints, the energy of the solar spectrum corresponding to the Ge cell has not been fully converted and util...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/142H01L31/0352H01L31/0304H01L31/18
CPCY02E10/50Y02P70/50
Inventor 李奎龙董建荣陆书龙赵勇明于淑珍杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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