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Preparation method of high-transmittance, high-resistance and high-hardness co-doped DLC film

A co-doping, high hardness technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problem of wear resistance that fails to meet the requirements of high-precision devices, low hardness, resistance adjustment, etc. problem, to achieve the effect of high transmittance, good repeatability and strong operability

Pending Publication Date: 2021-06-04
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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Problems solved by technology

[0003] But for the DLC film, the non-doped DLC film contains less diamond phase (sp3), the hardness is not high, the resistance cannot be adjusted reasonably within a certain range, and its wear resistance sometimes fails to meet the use of high-precision devices. Require

Method used

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Embodiment Construction

[0020] The invention provides a method for preparing a high-transparency, high-resistance, and high-hardness co-doped DLC film, comprising the following steps:

[0021] S1. Take ultra-clear high-transparency glass as the substrate, clean the substrate, remove the dirt on the surface of the substrate, and dry it with hot air;

[0022] S2. Using the magnetron three-target co-sputtering system, place the W target and the C target on the two target positions of the magnetron three-target co-sputtering system respectively. Both the W target and the C target use a DC power supply, and then the magnetron three The target co-sputtering system vacuumizes, injects argon, glows, activates and cleans the target;

[0023] S3. Place the substrate in the magnetron three-target co-sputtering system, and vacuum the magnetron three-target co-sputtering system to a vacuum degree of 6.0*10 -5 At Pa, the sputtering gas argon is introduced to start the sputtering for pre-sputtering;

[0024] S4. ...

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Abstract

The invention discloses a preparation method of a high-transmittance, high-resistance and high-hardness co-doped DLC film. The preparation method comprises the following steps that S1, a substrate is cleaned, and dirt on the surface of the substrate is removed; S2, a magnetic control three-target co-sputtering system is adopted, a W target and a C target are placed at two target positions of the magnetic control three-target co-sputtering system respectively, the W target and the C target both adopt a direct-current power source, then the magnetic control three-target co-sputtering system is vacuumized, argon is introduced, luminance build-up is performed, and target material activation and cleaning are carried out; S3, the substrate is placed in the magnetic control three-target co-sputtering system, the magnetic control three-target co-sputtering system is vacuumized through the direct-current power source, when the vacuum degree reaches 6.0*10<-5> Pa, sputtering gas argon is introduced, luminance build-up is conducted, and pre-sputtering is conducted; and S4, sputtering coating is conducted on the surface of the substrate to obtain the co-doped DLC thin film is obtained; According to the preparation method, the hardness of the DLC thin film can be improved, high transmittance can be achieved, the resistance of the thin film can be changed, the characteristic of high resistance is achieved, and higher use requirements of devices are met.

Description

technical field [0001] The invention relates to the technical field of diamond-like carbon films, in particular to a method for preparing a co-doped DLC film with high transparency, high resistance and high hardness. Background technique [0002] Diamond-like carbon film is a kind of amorphous carbon film with performance similar to that of diamond, and has related properties of diamond. The hardness is second only to diamond, and its excellent mechanical, optical and chemical properties have long been used at home and abroad. [0003] But for the DLC film, the non-doped DLC film contains less diamond phase (sp3), the hardness is not high, the resistance cannot be adjusted reasonably within a certain range, and its wear resistance sometimes fails to meet the use of high-precision devices. Require. Contents of the invention [0004] The purpose of the present invention is to provide a method for preparing a co-doped DLC film with high transparency, high resistance and hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/352C23C14/0611C23C14/0036
Inventor 沈洪雪姚婷婷李刚彭塞奥
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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