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Titanium doped graphene quantum dot-based gallium oxide crystal solid-state laser

A graphene quantum dot, solid-state laser technology, applied in lasers, phonon exciters, laser parts, etc., can solve the problems of small thermal conductivity and high requirements for refrigeration, and achieve changes in resistivity and good spectral absorption. and the effect of the response

Inactive Publication Date: 2019-02-01
NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, an obvious obstacle to the development of high-power fiber lasers is that the thermal conductivity of silica glass, which is widely used as an active fiber substrate, is only 1.4-1.6W m-1K-1, and the small thermal conductivity has a huge impact on heat dissipation. Adverse effects, so fiber lasers still have high requirements for cooling during high-power operation, which also limits the continued improvement of its power

Method used

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  • Titanium doped graphene quantum dot-based gallium oxide crystal solid-state laser

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Experimental program
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Embodiment 1

[0030] Embodiment 1 Preparation of titanium-doped graphene quantum dots

[0031] Weigh 2.0g single-layer graphene oxide, add 1L of polyvinyl alcohol aqueous solution with a mass percentage concentration of 10%, stir evenly to obtain a graphene oxide dispersion, add 2g of hexagonal crystal structure, 0.1g of titanium dioxide powder, and a particle size of 20nm Zinc oxide and 8g of polymethylpyrrolidone were uniformly dispersed, then transferred to a crucible, and the crucible was placed in a muffle furnace, heated to 600°C at a rate of 3°C / min, and then calcined in an air atmosphere for 4h. Naturally cool down to room temperature, wash the solid mixture in the crucible with hot water at 80°C, and dry to prepare titanium-doped graphene quantum dots.

Embodiment 2

[0032] The preparation of embodiment 2 titanium-doped graphene quantum dots

[0033]Take by weighing 2.0g monolayer graphene oxide, add 500ml mass percentage concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.5g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm, 0.2g of titanium dioxide powder and 6g of polymethylpyrrolidone, evenly dispersed, transferred to a crucible, placed in a muffle furnace, heated to 500°C at a rate of 1.5°C / min, and then calcined in an air atmosphere for 8h , naturally cooled to room temperature, washed the solid mixture in the crucible with hot water at 90°C, and dried to prepare titanium-doped graphene quantum dots.

Embodiment 3

[0034] The preparation of embodiment 3 titanium-doped graphene quantum dots

[0035] Take by weighing 2.0g single-layer graphene oxide, add 800ml mass percentage concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.8g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm, 0.02g of titanium dioxide powder and 10g of polymethylpyrrolidone, evenly dispersed, transferred to a crucible, placed in a muffle furnace, heated to 550°C at a rate of 5°C / min, and then calcined in an air atmosphere for 4h , naturally cooled to room temperature, washed the solid mixture in the crucible with hot water at 90°C, and dried to prepare titanium-doped graphene quantum dots.

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Abstract

The invention provides a titanium-doped graphene quantum dot-based gallium oxide crystal solid-state laser. The laser comprises a metal heat sink, a resonant cavity, an LD pump source, a coupling unit, an input mirror, a gain medium, an acousto-optic crystal, and an output mirror, wherein the LD pump source, the coupling unit, the input mirror, the gain medium, the acousto-optic crystal, and the output mirror are sequentially arranged. According to the solid-state laser, the titanium oxide-doped graphene quantum dot-based gallium oxide crystal material is adopted; a wide-band gap semiconductorgallium oxide is adopted as a host material, and the band gap width of the wide-band gap semiconductor gallium oxide 4.9 ev, and has good spectrum absorption and response perform for ultraviolet light in an ultraviolet light band; when titanium-doped graphene quantum dots in the gallium oxide are illuminated by light, the gallium oxide semiconductor material absorbs the light and generates electron-hole pairs; electrons or holes will be injected into the graphene quantum dots under the action of a junction barrier electric field; and the concentration of carriers in graphene changes accordingly, therefore, the resistivity of a crystal material can be greatly changed.

Description

technical field [0001] The invention relates to the field of laser equipment, in particular to a gallium oxide crystal solid-state laser based on titanium-doped graphene quantum dots. Background technique [0002] Thermal effects can lead to problems such as thermal depolarization and thermal-induced diffraction loss, which seriously affect the main performance indicators such as the output power, conversion efficiency, and beam quality of the laser, and even cause damage to the gain medium in severe cases, which is the most important limiting factor for the performance of high-power lasers . In order to alleviate the impact of thermal effects, technicians in related fields use gain media in the form of slabs, DISKs, and optical fibers to increase the surface area to volume ratio of the gain media and greatly improve heat dissipation efficiency, thereby greatly advancing the power output capability of lasers. . Compared with slab and DISK lasers, fiber lasers have the foll...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16H01S3/06H01S3/04C30B29/16C30B15/36
CPCH01S3/163C30B15/36C30B29/16H01S3/0405H01S3/0407H01S3/0621H01S3/0623H01S3/1675
Inventor 沈荣存
Owner NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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