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A high-power solid-state laser of gallium oxide crystal based on titanium doped graphene quantum dots

A technology of graphene quantum dots and solid-state lasers, which is applied in the direction of lasers, phonon exciters, laser components, etc., can solve the problems of improving electrical conductivity, and achieve the effect of changing resistivity, good spectral absorption and response

Pending Publication Date: 2019-01-18
NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to increase the β-Ga 2 o 3 At present, the n-type conductivity is mainly achieved by doping Si, Sn and Ti plasma of groups IIIA, IVA and IVB. However, due to the limitation of doping concentration and growth technology, the single Doping has limited improvement in conductivity

Method used

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  • A high-power solid-state laser of gallium oxide crystal based on titanium doped graphene quantum dots
  • A high-power solid-state laser of gallium oxide crystal based on titanium doped graphene quantum dots
  • A high-power solid-state laser of gallium oxide crystal based on titanium doped graphene quantum dots

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Embodiment 1

[0032] Embodiment 1 Preparation of titanium-doped graphene quantum dots

[0033]Weigh 2.0g of single-layer graphene oxide, add 1L of polyvinyl alcohol aqueous solution with a mass percentage concentration of 10%, stir evenly to obtain a graphene oxide dispersion, add 2g of hexagonal crystal structure, 0.1g of titanium dioxide powder, and a particle size of 20nm Zinc oxide and 8g of polymethylpyrrolidone were uniformly dispersed, then transferred to a crucible, and the crucible was placed in a muffle furnace, heated to 600°C at a rate of 3°C / min, and then calcined in an air atmosphere for 4h. Naturally cool down to room temperature, wash the solid mixture in the crucible with hot water at 80°C, and dry to prepare titanium-doped graphene quantum dots.

Embodiment 2

[0034] The preparation of embodiment 2 titanium-doped graphene quantum dots

[0035] Take by weighing 2.0g monolayer graphene oxide, add 500ml mass percentage concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.5g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm, 0.2g of titanium dioxide powder and 6g of polymethylpyrrolidone, evenly dispersed, transferred to a crucible, placed in a muffle furnace, heated to 500°C at a rate of 1.5°C / min, and then calcined in an air atmosphere for 8h , naturally cooled to room temperature, washed the solid mixture in the crucible with hot water at 90°C, and dried to prepare titanium-doped graphene quantum dots.

Embodiment 3

[0036] The preparation of embodiment 3 titanium-doped graphene quantum dots

[0037] Take by weighing 2.0g single-layer graphene oxide, add 800ml mass percentage concentration and be in the polyvinyl alcohol aqueous solution of 10%, stir to obtain graphene oxide dispersion liquid, add 0.8g to have hexagonal crystal structure, the zinc oxide that particle diameter is 20nm, 0.02g of titanium dioxide powder and 10g of polymethylpyrrolidone, evenly dispersed, transferred to a crucible, placed in a muffle furnace, heated to 550°C at a rate of 5°C / min, and then calcined in an air atmosphere for 4h , naturally cooled to room temperature, washed the solid mixture in the crucible with hot water at 90°C, and dried to prepare titanium-doped graphene quantum dots.

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Abstract

The invention provides a high-power solid-state laser of a gallium oxide crystal based on a titanium doped graphene quantum dot, which comprises a laser oscillator, a dichroic mirror, a laser amplifier and an enhanced pumping light source. The laser oscillator comprises a metal heat sink, a resonant cavity, a side LD pump source, and an end LD pump source, a coupling unit, an input mirror, a gainmedium, an acousto-optic crystal and an output mirror which are connected in turn. The acousto-optic crystal is a gallium oxide crystal based on a titanium doped graphene quantum dot; The gallium oxide crystal based on the titanium doped graphene quantum dot comprises beta-Ga2O3 host material and 0.005%- 0.03% Ti doped graphene quantum dots. The high power solid-state laser adopts GaO crystal material of Ti-doped graphene quantum dots, and uses wide band gap semiconductor material GaO as the host material, having band gap is 4.9 eV, in the ultraviolet light band, and having good spectral absorption and response to ultraviolet light.

Description

technical field [0001] The invention relates to the field of laser equipment, in particular to a high-power solid-state laser based on titanium-doped graphene quantum dot gallium oxide crystals. Background technique [0002] Thermal effects can lead to problems such as thermal depolarization and thermal-induced diffraction loss, which seriously affect the main performance indicators such as the output power, conversion efficiency, and beam quality of the laser, and even cause damage to the gain medium in severe cases, which is the most important limiting factor for the performance of high-power lasers . In order to alleviate the impact of thermal effects, technicians in related fields use gain media in the form of slabs, DISKs, and optical fibers to increase the surface area to volume ratio of the gain media and greatly improve heat dissipation efficiency, thereby greatly advancing the power output capability of lasers. . Compared with slab and DISK lasers, fiber lasers ha...

Claims

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Application Information

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IPC IPC(8): H01S3/0941H01S3/094H01S3/106C30B29/16
CPCH01S3/0941C30B29/16H01S3/094038H01S3/1068
Inventor 沈荣存
Owner NANJING TONGLI CRYSTAL MATERIALS RES INST CO LTD
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