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MicroLED chip adhesion type array transfer method based on maskless photoetching

A technology of maskless lithography and transfer method, which is applied in the field of MicroLED chip-attached array transfer, can solve problems such as poor stability, easy position displacement, and poor transfer accuracy, so as to improve efficiency, ease array transfer, and reduce workload effect

Active Publication Date: 2021-06-04
GUANGDONG UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the problems raised by the background technology, the purpose of the present invention is to propose a MicroLED chip-attached array transfer method based on maskless lithography, which can effectively improve the speed and yield of MicroLED chip transfer, improve transfer accuracy and transfer stability , which solves the problems of poor transfer accuracy, poor stability, and easy positional displacement after the transfer of the existing MicroLED chip transfer method

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  • MicroLED chip adhesion type array transfer method based on maskless photoetching
  • MicroLED chip adhesion type array transfer method based on maskless photoetching
  • MicroLED chip adhesion type array transfer method based on maskless photoetching

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Embodiment Construction

[0041] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0042] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description. It is not intended to indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and operate in a particular orientation...

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Abstract

The invention discloses a micro LED chip adhesion type array transfer method based on maskless photoetching. The method comprises the following steps of S1, preparing a first middle carrier plate and a second middle carrier plate, wherein the surfaces of the first middle carrier plate and the second middle carrier plate are coated with polydimethylsiloxane layers; S2, pressing the surface of the first middle carrier plate on the array of the MicroLED chips of the sapphire substrate; S3, irradiating the sapphire substrate with laser, then heating the first intermediate carrier plate and the sapphire substrate, and transferring the array of the MicroLED chips to the first intermediate carrier plate; and S4, pressing the surface of the second middle support plate on the array of the MicroLED chips of the first middle support plate. According to the MicroLED chip adhesion type array transfer method based on maskless photoetching, the transfer speed and yield of the MicroLED chips are effectively improved, the transfer accuracy and the transfer stability are improved, and the problems that an existing MicroLED chip transfer method is poor in transfer accuracy and stability and prone to position displacement after transfer are solved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a maskless photolithography-based micro LED chip adhesion array transfer method. Background technique [0002] Micro LED is LED miniaturization technology, which refers to the transfer of traditional LED arrays and miniaturization to the circuit substrate to form ultra-fine-pitch LEDs, and further shrink the length of millimeter-level LEDs to micron-level to achieve ultra-high pixels, Ultra-high resolution, a technology that can theoretically adapt to screens of various sizes. [0003] Micro-LED has the characteristics of self-illumination without backlight, similar to OLED, but compared with OLED, Micro-LED color is easier to adjust accurately, has longer luminous life and higher brightness. Therefore, it is another display technology after OLED that has the advantages of thinness and power saving, and is known as the next-generation display technology after OLED. Bec...

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Application Information

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IPC IPC(8): H01L21/67H01L21/683H01L33/48
CPCH01L21/67132H01L21/6835H01L33/48H01L2221/68322H01L2933/0033
Inventor 汤晖陈新赵清虎高健刘强贺云波何苗张揽宇
Owner GUANGDONG UNIV OF TECH
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