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Method for manufacturing micro lens on back surface of substrate, photoelectric detector and preparation method of photoelectric detector

A technology for photodetectors and manufacturing methods, which is applied in the field of photodetectors, can solve the problem that the photosensitive surface cannot be reduced, and achieve the effects of reducing area, reducing junction capacitance, and increasing diameter

Pending Publication Date: 2021-06-04
湖北光安伦芯片有限公司
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  • Application Information

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Problems solved by technology

The size of the direct photosensitive surface of the photodetector is directly related to factors such as coupling efficiency, junction capacitance, and RC constant. However, the traditional photodetector has a normal-incidence light incident method, which will cause the photosensitive surface to be unable to be reduced, and then appear other series of questions

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  • Method for manufacturing micro lens on back surface of substrate, photoelectric detector and preparation method of photoelectric detector
  • Method for manufacturing micro lens on back surface of substrate, photoelectric detector and preparation method of photoelectric detector
  • Method for manufacturing micro lens on back surface of substrate, photoelectric detector and preparation method of photoelectric detector

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Embodiment Construction

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] see figure 1 , the embodiment of the present invention provides a method for manufacturing a microlens on the back of a substrate, comprising the following steps: S1, fabricating a photoresist with a lens shape on the back of an InP-based substrate; S2, applying the photoresist Baking to obtain a lens mold with a preset radius of curvature; S3, using ICP technology to etch a microlens mold conforming to a preset arch height, and transferring the microle...

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Abstract

The invention relates to a method for manufacturing a micro lens on the back surface of a substrate. The method comprises the following steps: S1, manufacturing a photoresist type with a lens shape on the back surface of an InP-based substrate; S2, baking the photoresist to obtain a lens glue type with a preset curvature radius; S3, adopting an ICP technology to etch a micro-lens glue type conforming to a preset arch height, and transferring the micro-lens glue type to the InP-based substrate; and S4, after etching and transferring are completed, cleaning and drying after soaking in an alkaline solution. The preparation method of the photoelectric detector comprises the InP-based substrate back micro-lens prepared by the manufacturing method of the substrate back micro-lens. The photoelectric detector comprises the InP-based substrate back micro lens prepared by the manufacturing method of the substrate back micro lens. By introducing the micro-lens technology, the light incidence mode of the InP-based substrate is changed from normal incidence to back incidence, the area of the photosensitive surface is reduced, the diameter of the equivalent photosensitive surface is greatly improved, the coupling efficiency is improved, the junction capacitance is reduced, and the working efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a manufacturing method of a microlens on the back of a substrate, a photodetector chip and a manufacturing method thereof. Background technique [0002] In today's information society, people are pursuing faster transmission speed, shorter response time, and wider use range, which promotes the rapid development of our mobile communication technology. From 2G to the current 5G network construction that has already appeared, transistors are inseparable. Do not open chips, such as active and passive chips such as lasers, detectors, and IC chips. Photodetectors are an indispensable device in optical communication systems. With the development of 5G networks and the rapid development of optical communication technology, 25GPin and 10GAPD have been gradually used in common use. With the pursuit of higher speed and lower power Consumption requires better and better performance o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/101H01L31/18
CPCH01L31/02327H01L31/18H01L31/101Y02P70/50
Inventor 代智文刘志峰吴建家葛婷
Owner 湖北光安伦芯片有限公司