Preparation method of color silicon-based OLED
A silicon-based, color technology, applied in the field of OLED preparation, can solve the problems of crosstalk, low color gamut, loss of functionality, etc.
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[0037] The specific implementation manner of the present invention will be described in further detail below by describing the embodiments with reference to the accompanying drawings.
[0038] Such as Figure 1 to Figure 7 As shown, the OLED structure produced by the color silicon-based OLED preparation method of the present invention includes a CMOS substrate, an OLED layer, a first ALD film layer, a color film layer, a second ALD film layer, an encapsulation layer, and a third ALD film layer arranged in sequence. As well as the organic layer, an anode and a PDL are provided between the CMOS substrate and the OLED layer.
[0039] The preparation method of the colored silicon-based OLED of the present invention comprises the following steps:
[0040] On the CMOS substrate, the anode film is first formed by magnetron sputtering, and then the anode is formed by glue coating, exposure, development, etching, and glue removal;
[0041] Form the PDL film layer on the substrate aft...
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