Titanium-tungsten etching solution and preparation method and application thereof
An etching solution, titanium tungsten technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low stability and substrate corrosion, and achieve good stability, avoid corrosion, and achieve good etching effects.
Active Publication Date: 2021-06-18
JIANGSU AISEN SEMICON MATERIAL CO LTD
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Problems solved by technology
[0005] Because the titanium-tungsten etching solution currently used on the market contains strong corrosive substances, it has great corrosion on the substrate and has low stability.
Method used
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Embodiment 1
[0037] The preparation method of the titanium-tungsten etching solution provided in Example 1 is as follows: hydrogen peroxide, a metal complexing agent, a hydrogen peroxide stabilizer, a pH regulator and water are mixed to obtain the titanium-tungsten etching solution.
[0038] Refer to Example 1 for the preparation method of the titanium-tungsten etching solution provided in Examples 2-15 and Comparative Examples 1-4.
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The invention provides a titanium-tungsten etching solution and a preparation method and application thereof. The titanium-tungsten etching solution comprises, by weight, 15-30 parts of hydrogen peroxide, 0.1-20 parts of a metal complexing agent, 0.1-10 parts of a hydrogen peroxide stabilizer, 0.1-20 parts of a pH regulator and water. The titanium-tungsten etching solution is good in etching effect, free of corrosion to a substrate, good in stability and long in service life.
Description
technical field [0001] The invention belongs to the field of semiconductor preparation, and in particular relates to a titanium-tungsten etching solution and its preparation method and application, in particular to a titanium-tungsten etching solution with good etching effect and its preparation method and application. Background technique [0002] In recent years, copper or gold bump technology is a new generation of chip interconnection technology, which is used for the connection of chips and substrates in the integrated circuit packaging process. Compared with the traditional solder bump packaging process, it has better electrical conductivity and thermal performance. And reliability, better resistance to electromigration, more suitable for fine pitch, higher interconnect density, and low cost. During the bump manufacturing process, due to the poor adhesion of copper or gold to silicon dioxide / silicon, it is necessary to lay titanium (Ti) or titanium tungsten (TiW) betwe...
Claims
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Login to View More IPC IPC(8): C23F1/26H01L21/3213H01L21/768
CPCC23F1/26H01L21/32134H01L21/76865
Inventor 顾群艳梁豹杜冰邱柱赵建龙张兵向文胜朱坤
Owner JIANGSU AISEN SEMICON MATERIAL CO LTD