Preparation method of full-self-aligned high-density 3D multilayer memory

Abstract

The invention discloses a preparation method of a fully-self-aligned high-density 3D multilayer memory, and relates to a preparation technology of memories. The method comprises the following steps: 1) forming a basic structure body; 2) slotting the basic structure body; 3) filling an insulating medium in the obtained segmentation groove; 4) performing deep hole etching on the insulating medium filled in the step 3) to form storage unit holes which are discretely arranged along the segmentation groove, arranging the insulating medium between the adjacent storage unit holes, and exposing the basic structure body part in the storage unit holes; and 5) arranging each layer of medium required by the preset memory structure in the memory unit hole layer by layer. The semiconductor memory prepared by the technology of the invention has high storage density.

Description

technical field [0001] The invention relates to the preparation technology of memory. Background technique [0002] Existing technologies include Erasable Programmable Read Only Memory (EPROM), Electrically Erasable Programmable Read Only Memory (EEPROM), Flash Memory, NAND-Flash Memory, Hard Disk, Compact Disk (CD), Digital Versatile Disc (DVD) Various digital storage technologies, including the Blu-ray Disc registered by the Blu-ray Disc Association, have been widely used for data storage for more than 50 years. However, the lifetime of storage media is generally less than 5 to 10 years. The antifuse storage technology developed for big data storage cannot meet the needs of massive data storage because of its high cost and low storage density. [0003] Chinese patent application CN101447502A discloses a non-volatile storage device and its manufacturing and use methods, see its Figure 11 to Figure 14 , the key process steps are: setting the data storage layer 130 on the ...

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Problems solved by technology

The minimum width of both will determine the minimum value of the memory cell area on the same layer, as a result, the memory density is limited by the process level

[0007] Chinese patent application CN101615656A discloses a non-volatile storage device and its manufacturing method, see its Figure 11 , the thickness of the storage medium (150) or buffer layer (162), as a key parameter affecting the performance of the device, depends on the control of deep groove etching technology, and cannot guarantee the storage medium (150) or buffer layer in each layer of memory cells The thickness of layer (162) is consistent, also there is aforementioned problem simultaneously

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