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Method for evaluating withstand voltage of oxide film of monocrystalline silicon wafer

An evaluation method and oxide film technology, which is applied in the direction of measuring devices, instruments, and testing semiconductor materials, etc., can solve problems such as the deterioration of the withstand voltage characteristics of the oxide film, and achieve the effect of simplicity and accuracy

Active Publication Date: 2021-06-22
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Here, the following knowledge is disclosed in Patent Document 1 that, among the Nv region and the Ni region constituting the N region of single-crystal silicon, a part of the Nv region is a defect region detectable by Cu deposition; and even if the single-crystal silicon The entire surface of the wafer is composed of an N region, and when a defective region detectable by Cu deposition is included in the N region, the withstand voltage characteristics of the oxide film are also degraded

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  • Method for evaluating withstand voltage of oxide film of monocrystalline silicon wafer
  • Method for evaluating withstand voltage of oxide film of monocrystalline silicon wafer
  • Method for evaluating withstand voltage of oxide film of monocrystalline silicon wafer

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experiment example 1

[0053] (Experimental example 1: Experiment using a wafer-shaped sample)

[0054] Such as figure 2 As shown in (A), a single crystal silicon ingot having a diameter of 200 mm was grown by the CZ method while only changing the pulling speed V over time. Since the incubation conditions other than the pulling speed V are constant, the temperature gradient G is constant. Such as figure 2 As shown in (A), at the initial stage of cultivation, the pulling speed is increased to obtain a large V / G condition, and the pulling speed is gradually decreased to obtain a small V / G condition. figure 2 (B) is the measured value of the interstitial oxygen concentration Oi and the nitrogen concentration of the single crystal silicon ingot grown in this experimental example, and the oxygen concentration is 6×10 over the entire crystal length 17 atoms / cm 3 Below, the nitrogen concentration is 1 × 10 over the entire crystal length 13 atoms / cm 3 above.

[0055] From figure 2 The position i...

experiment example 2

[0081] (Experimental example 2: Experiment using a longitudinally cut sample)

[0082] Such as Figure 7 As shown, a single crystal silicon ingot with a diameter of 200 mm was grown by the CZ method while only changing the pulling speed V over time. Since the incubation conditions other than the pulling speed V are constant, the temperature gradient G is constant. Such as Figure 7 As shown, increasing the pulling speed at the initial stage of cultivation leads to a large V / G condition, and gradually decreases the pulling speed to reduce V / G, and then increases the pulling speed. The interstitial oxygen concentration Oi of the monocrystalline silicon ingot grown in this experimental example is 6×10 over the entire crystal length 17 atoms / cm 3 Below, the nitrogen concentration is 1 × 10 over the entire crystal length 14 atoms / cm 3 above.

[0083] exist Figure 7 Split the ingot at the crystallographic length positions indicated by the dotted lines to obtain multiple blo...

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Abstract

Provided is a method for evaluating the withstand voltage of an oxide film of a single-crystal silicon wafer, the method being capable of evaluating the withstand voltage of an oxide film of a single-crystal silicon wafer cut from an extremely low-oxygen and nitrogen-doped single-crystal silicon ingot in a simple and highly accurate manner. The surface of a wafer-shaped sample or a slit sample collected from an extremely low-oxygen, nitrogen-doped monocrystalline silicon ingot is subjected to a copper decoration treatment followed by a Wright etching treatment or a Secco etching treatment. Then, the surface is observed, and on the basis of the presence or absence and the presence region of defects appearing on the surface, the withstand voltage of an oxide film of a single crystal silicon wafer cut from the single crystal silicon ingot is evaluated.

Description

technical field [0001] The invention relates to an evaluation method of the withstand voltage of an oxide film of a single crystal silicon wafer cut out from an extremely low oxygen and nitrogen doped single crystal silicon ingot. Background technique [0002] The Czochralski method (CZ method) is mentioned as a typical manufacturing method of a silicon single crystal ingot. For single crystal silicon ingots grown by the CZ method, it is known that depending on the ratio V / G of the pulling speed V to the temperature gradient G at the solid-liquid interface, various native defects that can become a problem in the device manufacturing process (Grown -in defect). [0003] refer to figure 1 , under the condition of large V / G, the single crystal silicon ingot is dominated by the crystallization region where COP (Crystal Originated Particle) is detected, that is, the COP generation region 11 . The COP generation region 11 is a region where vacancies (Vacancy) dominates, and is ...

Claims

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Application Information

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IPC IPC(8): G01N33/00
CPCG01N33/00G01N33/0095
Inventor 铃木洋二
Owner SUMCO CORP