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Encapsulation method for silicon-based flat micro heat pipe

A flat-plate micro-heat pipe and silicon substrate technology, which is applied in the process of producing decorative surface effects, micro-structure technology, and micro-structure devices, etc. The effect of spot flow and curing enhancements, facilitating integrated manufacturing applications, improving results

Pending Publication Date: 2021-06-25
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sealing effect is good, but the method needs to control a certain pressure and inject the alloy and the working medium at the same time; the pressure is not stable, and because there is a certain resistance effect between the liquid and the surface during injection, the contact is not good, and bubbles are prone to affect the effect

Method used

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  • Encapsulation method for silicon-based flat micro heat pipe
  • Encapsulation method for silicon-based flat micro heat pipe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] combine Figure 1-2 , the silicon-based flat micro-heat pipe includes a sealed channel area and a micro-groove area, the sealed channel area is arranged on both sides of the micro-groove area, and a micro-groove group is arranged inside the micro-groove; An opening leading to the sealing channel area; the sealing channel area is provided with a sealing channel, and the sealing channel is provided with a working fluid injection / exhaust hole and an alloy injection hole, and the sealing channel has a continuous "bow" structure with one end and The microgroove group is connected, and the alloy injection port is set at the end of the sealing channel, and the working medium injection / extraction hole is set at the middle of the sealing channel.

[0042] The main film heater is set at the lower side of the working fluid injection / extraction hole, and the auxiliary film heater is set at the lower side of the alloy injection hole; both the main film heater and the auxiliary film ...

Embodiment 2

[0045] Pretreatment of silicon substrates:

[0046] In order to prevent internal air bubbles during sealing, the silicon substrate needs to be pretreated to improve its bonding performance with the low melting point alloy; the pretreatment method includes the following steps:

[0047] Step 1. Processing of the silicon substrate: the silicon substrate is formed by forming microgrooves on the silicon wafer by means of laser or chemical etching;

[0048] Step 2. Place the silicon substrate and the glass cover plate in an ultrasonic cleaning machine for cleaning with ultrapure water, acetone, alcohol, and ultrapure water. The cleaning time is 10 to 20 minutes for each solvent, and the cleaning temperature is 30 to 50°C;

[0049] Step 3: Carry out graphical modeling of the sealed channel area on the silicon substrate in the computer, and form a graph of the area to be treated by laser in the computer; then process the cleaned silicon substrate and glass cover under the action of fe...

Embodiment 3

[0056] combine Figure 1-2 , the first step is to make them respectively through MEMS processing technology:

[0057] 1) a silicon substrate 10 with a film main heater 7, a film auxiliary heater 8, a microgroove group 4 and a sealed channel 5;

[0058] 2) A glass cover plate 9 with a working fluid injection / exhaust hole 1 and an alloy injection hole 2. And seal the silicon substrate 10 and the glass cover 9 by electrostatic bonding;

[0059] In the second step, on both sides of the sealing channel 5, use sealant to bond the copper tube to the working fluid injection / extraction hole 1 and the alloy injection hole 2;

[0060] The third step is to place a sufficient amount of low-melting point alloy 6 (melting point is 139°C) at the alloy injection hole 1, control the temperature of the film heater 7 to be 145°C and the temperature of the film heater 8 to be 130°C, and use a small controllable air pump to make the A pressure difference of 50kPa is formed between the copper tub...

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Abstract

The invention discloses a filling and sealing method for a silicon-based flat micro heat pipe, which can be applied to integrated manufacturing of micro heat pipes and belongs to the field of working medium filling and packaging of heat pipes. Aiming at the problems that a traditional heat pipe filling and sealing method is not suitable for a silicon-based flat plate micro heat pipe and nodes are easy to form after common sealing operation of the silicon-based flat plate micro heat pipe at present, the invention provides a light, thin, flat and miniaturized filling and sealing method which can effectively and accurately realize integrated operation of filling and sealing of a working medium. The integrated manufacturing application of the silicon-based micro heat pipe in the field of electronic devices is promoted, and the glass and the silicon substrate are treated by using the cold processing characteristic of femtosecond laser, and then the hole filling is performed by using gold, so that the stability during the injection of low-melting-point alloy and working medium and the exhaust of air is improved, and the sealing effect is further improved.

Description

technical field [0001] The invention belongs to the field of working medium pouring and encapsulation of heat pipes, and relates to a method for thinning, flattening and miniaturization of silicon-based flat micro heat pipes, which is applied to the integrated manufacture of micro heat pipes. Background technique [0002] With the rapid development of electronic technology and information industry, the continuous integration, power and miniaturization of electronic devices such as high-power LEDs, central processing units (CPUs), and integrated circuits (ICs) has become a mainstream development trend. Due to the small size and high power consumption of power electronic devices, it is easy to generate a large amount of heat accumulation inside them, forming local hot spots, which will cause a sharp rise in temperature and even cause the chip to fail. The heat dissipation problem of this high heat flux has become an important factor affecting the performance of electronic devi...

Claims

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Application Information

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IPC IPC(8): B81C1/00
CPCB81C1/00269B81C2201/0111
Inventor 李聪明牛蔺楷武兵熊晓燕
Owner TAIYUAN UNIV OF TECH
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