Encapsulation method for silicon-based flat micro heat pipe

A flat-plate micro-heat pipe and silicon substrate technology, which is applied in the process of producing decorative surface effects, micro-structure technology, and micro-structure devices, etc. The effect of spot flow and curing enhancements, facilitating integrated manufacturing applications, improving results

Pending Publication Date: 2021-06-25
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sealing effect is good, but the method needs to control a certain pressure and inject the alloy and the working medium at the same time; the pressure is not stable,

Method used

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  • Encapsulation method for silicon-based flat micro heat pipe
  • Encapsulation method for silicon-based flat micro heat pipe

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] Example 1:

[0041] Combine Figure 1-2 The silicon-based flat microsers include, sealing the channel region and the micro slot zone, the sealing channel region is disposed on both sides of the microwow region, the micro slot is placed in the microcoll group; the microken group is connected to each other and each side is provided. A opening to the sealing channel area; the sealing channel region is provided with a sealing channel, the sealing channel is provided with a working injection / pumping hole and an alloy injection hole, and the sealing channel is continuous "bow" type structure one end and The microcoll group is connected, and the alloy injection port is disposed at the end of the sealing channel, and the working body injection / pumping hole is disposed in the middle of the sealing channel.

[0042] The thin film main heater is disposed at a position of the lower side of the working body injection / inlet hole, and the film auxiliary heater is disposed on the lowe...

Example Embodiment

[0044] Example 2:

[0045] Pre-treatment of silicon substrate:

[0046] In order to prevent the internal bubbles in the seal, the silicon substrate needs to be pretreated to improve the binding properties of its and low melting point alloys; the pretreatment method includes the following steps:

[0047] Step 1, the processing of the silicon substrate: The silicon substrate is formed on the silicon-forming method using laser or chemical etching;

[0048] Step 2. Place the silicon substrate and the glass cover in the ultrasound cleaning machine, supermuncing, acetone, alcohol, ultrapure water, cleaning time per solvent 10 to 20 min, cleaning temperature 30 ~ 50 ° C;

[0049] Step, in the computer, the sealing channel region on the silicon substrate is patterned, and the area pattern to be laser processed is formed in the computer; then the cleaned silicon substrate and the glass cover are carried out under the action of femtosecond laser. Regional 点 etching; etching is 10 μm, etched...

Example Embodiment

[0055] Example 3:

[0056] Combine Figure 1-2 First, the MEMS processing process is separately produced:

[0057] 1) Silicon substrate 10 with thin film main heater 7, film auxiliary heater 8, microves 4 and sealing channel 5;

[0058] 2) The glass cover 9 with a working body injection / pumping hole 1 and the alloy injection hole 2. And the silicon substrate 10 and the glass cover 9 are sealed by electrostatic bonding;

[0059] In the second step, in the sealing channel 5, the sealing adhesive bonding a purple copper pipe is used to the working material injection / pumping hole 1 and the alloy injection hole 2;

[0060] In the third step, a sufficient amount of low melting point alloy 6 (melting point is 139 ° C) is placed at 1 in the alloy injection hole 1, and the control film heater 7 temperature is 145 ° C and the film heater 8 temperature is 130 ° C, and the small controllable air pump is made The pressure difference is formed between the purple copper tube 1 12 and the purp...

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Abstract

The invention discloses a filling and sealing method for a silicon-based flat micro heat pipe, which can be applied to integrated manufacturing of micro heat pipes and belongs to the field of working medium filling and packaging of heat pipes. Aiming at the problems that a traditional heat pipe filling and sealing method is not suitable for a silicon-based flat plate micro heat pipe and nodes are easy to form after common sealing operation of the silicon-based flat plate micro heat pipe at present, the invention provides a light, thin, flat and miniaturized filling and sealing method which can effectively and accurately realize integrated operation of filling and sealing of a working medium. The integrated manufacturing application of the silicon-based micro heat pipe in the field of electronic devices is promoted, and the glass and the silicon substrate are treated by using the cold processing characteristic of femtosecond laser, and then the hole filling is performed by using gold, so that the stability during the injection of low-melting-point alloy and working medium and the exhaust of air is improved, and the sealing effect is further improved.

Description

technical field [0001] The invention belongs to the field of working medium pouring and encapsulation of heat pipes, and relates to a method for thinning, flattening and miniaturization of silicon-based flat micro heat pipes, which is applied to the integrated manufacture of micro heat pipes. Background technique [0002] With the rapid development of electronic technology and information industry, the continuous integration, power and miniaturization of electronic devices such as high-power LEDs, central processing units (CPUs), and integrated circuits (ICs) has become a mainstream development trend. Due to the small size and high power consumption of power electronic devices, it is easy to generate a large amount of heat accumulation inside them, forming local hot spots, which will cause a sharp rise in temperature and even cause the chip to fail. The heat dissipation problem of this high heat flux has become an important factor affecting the performance of electronic devi...

Claims

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Application Information

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IPC IPC(8): B81C1/00
CPCB81C1/00269B81C2201/0111
Inventor 李聪明牛蔺楷武兵熊晓燕
Owner TAIYUAN UNIV OF TECH
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