Heterogeneous integrated structure of graphene device and GaN device and preparation method of heterogeneous integrated structure

Abstract

The invention provides a heterogeneous integrated structure of a graphene device and a GaN device, and a preparation method of the heterogeneous integrated structure. According to the invention, a P-type graphene device and an N-type GaN device can be integrated on a GaN-based single chip at the same time to replace a traditional Si-CMOS; a second graphene layer inserted between an AlGaN barrier layer and a second Al2O3 layer can improve the heat dissipation of the GaN device and reduce the ohmic contact resistance at the same time, thereby improving the performance of the GaN device on the whole; a first Al2O3 layer is used as an isolation buried oxide layer of the graphene device, the second Al2O3 layer is used as a gate oxide dielectric layer of the graphene device and the GaN device, and the first Al2O3 layer and the second Al2O3 layer can be directly used as isolation side walls of the graphene device and the GaN device, so preparation procedures are reduced, cost is reduced, and device quality is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a graphene device and a GaN device heterogeneous integration structure and a preparation method. Background technique [0002] With the development of semiconductor technology, more and more attention is paid to smaller and more integrated chips. Among them, various functional devices are integrated on a single chip to make the entire package module smaller in size, higher in performance, and more economical. The cost of subsequent processes has attracted more and more attention. [0003] As a representative of the third-generation semiconductor material, gallium nitride (GaN) has many excellent characteristics such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration and good high temperature working ability. Therefore, based on GaN The third-generation semiconductor devices, such as high electron mobility trans...

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Problems solved by technology

[0004] As a third-generation semiconductor material, GaN surpasses Si technology in terms of frequency and withstand voltage, but there is currently no GaN-based technology that can replace Si-CMOS

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