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Device processing method, MEMS device and processing method thereof, and MEMS microphone

A processing method and microphone technology, applied in the direction of electrostatic transducer microphone, sensor, loudspeaker, etc., can solve problems such as etching damage, and achieve the effect of improving performance and avoiding loss

Active Publication Date: 2021-06-29
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a device processing method to solve the problem that the etching solution will cause etching damage to other non-target film layers in the wet etching process

Method used

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  • Device processing method, MEMS device and processing method thereof, and MEMS microphone
  • Device processing method, MEMS device and processing method thereof, and MEMS microphone
  • Device processing method, MEMS device and processing method thereof, and MEMS microphone

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Embodiment 1

[0032] figure 1 and figure 2 It is a schematic structural view of the device processing method in the first embodiment of the present invention during its processing.

[0033] first reference figure 1 As shown, the device processing method includes: forming a conductive film layer 30 on a substrate 10, and forming electrodes 40 electrically connected to each other on the conductive film layer 30, and the potential of the conductive film layer 30 is lower than The potential of the electrode 40.

[0034] Wherein, the material of the conductive film layer 30 includes polysilicon, for example. And, the conductive film layer 30 can also be an N-doped conductive layer. That is, in a specific embodiment, the conductive film layer 30 may be an N-doped polysilicon conductive layer. And, the conductive film layer 30 can be used, for example, to form a micromechanical structure of a device.

[0035] And, the electrode 40 may specifically be a metal electrode for electrically leading...

Embodiment 2

[0052] In this embodiment, the application of the above-mentioned processing method to MEMS devices will be explained. Figure 4-Figure 6 It is a structural schematic diagram of the MEMS device in the second embodiment of the present invention during its preparation process.

[0053] In this embodiment, the processing method of the MEMS device includes: sequentially forming the first sacrificial layer 210, the first conductive layer 310, the second sacrificial layer 220 and the second conductive layer 320 on the substrate 100; and forming the first electrode 410 and a second electrode 420. Wherein, the first electrode 410 is electrically connected to the first conductive layer 310 , and the second electrode 420 is electrically connected to the second conductive layer 320 .

[0054] Specifically, the potential of the first electrode 410 is higher than the potential of the first conductive layer 310 . Of course, the potential of the second electrode 420 may also be higher than...

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Abstract

The invention provides a device processing method, an MEMS device and a processing method thereof, and an MEMS microphone. A low-potential area with the potential lower than that of a conductive film layer is formed in a substrate, and the conductive film layer is electrically connected to the low-potential area, so that when a wet etching process is executed; due to the lowest potential of the low-potential area, the conductive film layer of a non-target etching layer can be replaced to form a negative electrode of a primary battery reaction, so the loss of the conductive film layer caused by the primary battery reaction is avoided, and the performance of the formed device is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a device processing method, a MEMS device and its processing method, and a MEMS microphone. Background technique [0002] In the process of integrated circuit processing, it includes film forming process, exposure process and etching process, etc., and the etching process generally includes dry etching process and wet etching process, of which wet etching process usually It is isotropic etching and has a large etching rate. In the process of device processing, there are generally many wet etching processes, such as etching of silicon dioxide materials, etching of silicon materials, and the like. Taking the MEMS microphone as an example, a wet etching process is usually used to remove the sacrificial material on both sides of the vibrating membrane to release the vibrating membrane. In the wet etching process, the substrate is usually placed in the etching solution o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R31/00H04R19/00H04R19/04
CPCH04R19/005H04R19/04H04R31/00H04R2201/003
Inventor 闾新明徐泽洋鲁列微石磊
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP