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A kind of crystal growth method and device

A technology of crystal growth and furnace body, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor uniformity of cooling temperature field, influence of crystal growth, inability to realize controllable adjustment of cooling process, etc., and achieve improvement. Crystal defects, improve crystal quality, improve the effect of uniformity

Active Publication Date: 2022-03-01
SICC CO LTD
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  • Abstract
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Problems solved by technology

[0003] The process of growing silicon carbide crystals by PVT method is carried out in a closed crucible. The crucible is heated by a heating device. This method cannot realize the controllable adjustment of the cooling process, and because the existing circulating water circulates from top to bottom or from small to top in the growth chamber, the water temperature changes during the cooling water flow process, and the uniformity of the cooling temperature field is relatively low. Poor, has an effect on crystal growth

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  • A kind of crystal growth method and device
  • A kind of crystal growth method and device
  • A kind of crystal growth method and device

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Embodiment 1

[0053] refer to Figure 1-3 , the present invention provides a cooling device for crystal growth, the device includes a furnace body 1, a quartz tube and a liquid spray plate 6, a chamber 2 for crystal growth is formed inside the furnace body; the quartz tube is sleeved on the furnace body On the outside of 1, the quartz tube includes the inner layer 3 of the quartz tube, the interlayer 4 and the outer layer 5 of the quartz tube from the inside to the outside; a liquid ejection port 61; the inner layer 3 of the quartz tube is provided with a plurality of second liquid ejection ports 31 corresponding to the first liquid ejection ports 61; the liquid ejection plate 6 can be rotated so that the first liquid ejection ports 61 and the second liquid ejection ports 31 are staggered or at least partially coincident. A first liquid ejection port 61 is provided through the liquid ejection plate 6, and a second liquid ejection port 31 is provided in the inner layer 3 of the quartz tube....

Embodiment 2

[0065] In a specific embodiment, there is provided a method for preparing silicon carbide crystals using the crystal growth apparatus with reference to the above, the method comprising the following steps:

[0066] (1) Preparation stage: bond the seed crystal on the top of the crucible, place the silicon carbide raw material on the bottom of the crucible; place the assembled crucible in the chamber formed by the furnace body; the opening area of ​​the plurality of second liquid injection ports is quartz 20-50% of the surface area of ​​the inner wall of the inner layer of the tube;

[0067] (2) Heating stage: control the first liquid injection port and the second liquid injection port to gradually rotate from staggered to the first partial overlap, and the area of ​​the first partial overlap is 30-60% of the opening area of ​​the second liquid injection port; Preferably 40-50%; the flow rate of the cooling liquid at the liquid inlet is 5-30L / min, and the pressure of the cooling...

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Abstract

The invention provides a crystal growth method and device, the method comprising: (1) preparation stage: the assembled crucible is placed in the furnace body, a quartz tube is arranged outside the furnace body, and the quartz tube includes an inner layer of the quartz tube, an interlayer and a quartz tube. The outer layer of the tube; the interlayer is provided with a liquid spray plate, and the liquid spray plate is provided with a plurality of first liquid spray ports; the inner layer of the quartz tube is provided with a plurality of second liquid spray ports; (2) crystal growth stage; (3) cooling Stage: Control the rotation of the liquid spray plate so that the first liquid spray port and the second liquid spray port overlap at least partially, and the cooling liquid is sprayed onto the furnace body through the first liquid spray port and the second liquid spray port. By controlling the cooling liquid to be sprayed onto the furnace body through the first liquid injection port and the second liquid injection port, the cooling liquid acts on the furnace body in the form of small droplets, which is beneficial to improve the uniformity of cooling of the furnace body; and by adjusting the first The overlapping part of the first liquid spray port and the second liquid spray port can realize quantitative adjustment and control of the water spray volume of the furnace body, and can provide different temperature fields according to different stages of crystal growth.

Description

technical field [0001] The invention relates to a crystal growth method and device, belonging to the technical field of crystal growth. Background technique [0002] Silicon carbide crystals have excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, high carrier mobility, and high chemical stability, and can be made into high-frequency, high-power electronics that work under high temperature and strong radiation conditions. Devices and optoelectronic devices have great application value in the fields of national defense, high technology, industrial production, power supply, and power transformation. [0003] The process of growing silicon carbide crystals by PVT method is carried out in a closed crucible. The crucible is heated by a heating device. This method cannot realize the controllable adjustment of the cooling process, and because the existing circulating water circulates from top to bottom or from small to top in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B28/12C30B29/36C30B33/02
CPCC30B23/002C30B28/12C30B29/36C30B33/02
Inventor 张虎张开端史建伟阴法波张维刚马振华
Owner SICC CO LTD
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