Preparation method of electronic-grade mixed acid etching solution

Abstract

The invention discloses a preparation method of an electronic-grade mixed acid etching solution. The method comprises the specific steps of injecting electronic-grade hydrofluoric acid into a mixed acid preparation tank, and starting a stirrer at the same time; injecting electronic-grade concentrated nitric acid into the mixed acid preparation tank, and uniformly stirring to prepare mixed acid; and selectively adding inorganic acid and organic acid, and uniformly mixing and stirring. The mass ratio of the electronic-grade hydrofluoric acid to the electronic-grade concentrated nitric acid to the inorganic acid to the organic acid is 1: 1 to 4.5: 0 to 5.0: 0 to 1.5. In order to inhibit the unstable chemical reaction between single hydrofluoric acid and silicon dioxide, improve the etching efficiency and improve the etching quality, the mixed acid etching solution composed of multiple components is prepared by adding the inorganic acid or the organic acid into the hydrofluoric acid, the chemical etching process of a liquid crystal panel / glass substrate and a solar cell panel (sheet) is further improved, so that the whole etching process is stable, effective and controllable, generation of bad convex points on the glass surface and further diffusion of concave points and scratches in the whole etching process can be effectively inhibited, and the superior product rate of products is greatly improved.

Description

technical field [0001] The invention relates to a preparation method of an electronic-grade mixed acid etching solution, which is applied to the etching and thinning of liquid crystal panels and glass substrates and the cleaning and texturing of solar panels (sheets), and belongs to the technical field of electronic chemicals applications. Background technique [0002] At the beginning of the thinning of liquid crystal panels and glass substrates, it is mainly diluted by a single hydrofluoric acid mixed with pure water and then reacted with the glass. As the thinning thickness continues to increase, and the requirements for thinning such as diversification of glass materials increase, in the actual industry During the operation, it was found that the original single hydrofluoric acid alone cannot meet the current chemical etching requirements for liquid crystal panels and glass substrates. Its main problems are reflected in the following aspects: [0003] 1. Hydrofluoric ac...

AI Technical Summary

Problems solved by technology

[0003] 1. Hydrofluoric acid is greatly affected by temperature changes, resulting in unstable changes in etching efficiency, and it is difficult to control the etching process

[0004] 2. Easy to combine with SiO 2 The reaction produces insoluble substances such as white silicate crystals, which are suspended in the etching solution, and adhere and etch in the equipment pipeline, seriously affecting the operation of the etching equipment and the recycling of the etching solution

[0005] 3. Adhesion of insoluble impurities to the surface of etched products can easily lead to bad bumps on the surface and edges, which seriously affects the surface quality of etched products

[0006] 4. It is easy to cause defects such as pits and scratches on the surface of etched products to enlarge

[0007] 5. The rate of the etching process is unstable, and the utilization rate of hydrofluoric acid is not high, resulting in an increase in the cost of neutralizing waste acid in the later stage

And hydrofluoric acid is easier to volatilize at high temperature, which increases safety hazards