An energy-saving crystal growth single crystal furnace equipment and its application method

Abstract

The invention discloses an energy-saving crystal growth single crystal furnace equipment. The single crystal furnace equipment includes a bracket on which a growth furnace is arranged. The growth furnace includes a lower furnace body fixed on the bracket, and an upper furnace cover is arranged above the lower furnace body. , the lower furnace cover is slid below, the upper furnace body is fixed above the upper furnace cover, the first control mechanism for controlling the opening and closing of the lower furnace cover is fixed on the bracket, and the first control mechanism for controlling the opening and closing of the upper furnace cover is arranged on the bracket The second control mechanism, a graphite tray is installed in the growth furnace, a quartz crucible is placed in the graphite tray, the third control mechanism for controlling the pulling and rotation of the graphite tray is arranged on the lower furnace cover, the seed crystal clip is arranged in the lower furnace body, and the upper furnace A fourth control mechanism for controlling the lifting and rotation of the seed clamp is fixed on the body. The single crystal furnace equipment of the present invention solves the problem of inconvenient removal of the quartz crucible of the traditional growth furnace by setting the lower furnace cover, and by setting the cooling chamber, the cooling speed is accelerated, and the crystal growth efficiency and the yield of silicon crystals are improved.

Description

technical field [0001] The invention relates to a single crystal furnace equipment, in particular to an energy-saving crystal growth single crystal furnace equipment and a using method thereof. Background technique [0002] The growth of semiconductor single crystal silicon mainly adopts the Czochralski method (Czochralski method, referred to as Cz method). In this method, polycrystalline silicon is put into a quartz crucible, heated and melted, and then the temperature of the silicon melt is slightly lowered to give a certain degree of supercooling, and a silicon single crystal (seed crystal) in a specific radial direction is combined with the silicon melt. Body contact, by adjusting the temperature of the melt and the upward lifting rate of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the pulling rate to make the crystal grow with a nearly constant diameter. At the end of the growth process, when there is still silicon melt in ...

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Problems solved by technology

[0004] The object of the present invention is to provide an energy-saving crystal growth single crystal furnace device and its use method. By setting the lower furnace cover, the problem of inconvenient removal of the quartz crucible of the traditional growth furnace is solved, and by setting the cooling chamber, the cooling is accelerated. The speed improves the crystal growth efficiency and the output of silicon crystals. By installing a wind power generation device on one side of the outlet pipe, the steam generated by cooling blows the windmill of the wind power generation device to rotate and store electrical energy.

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