Bidirectional switch power module and preparation method thereof

Abstract

The invention discloses a bidirectional switch power module and a preparation method thereof, one side surface of a copper-clad substrate DBC is sequentially provided with a driving terminal, silicon carbide MOSFET chips and a power terminal, a plurality of silicon carbide MOSFET chips are arranged at intervals, the plurality of silicon carbide MOSFET chips are connected in parallel in pairs to form two power electronic switches in different directions, the grid electrode and the source electrode of each silicon carbide MOSFET chip are respectively connected with the driving terminal through a driving resistor, the plurality of silicon carbide MOSFET chips are arranged on the same copper substrate, and the source electrodes are respectively connected with the power terminal to form common drain electrode connection. According to the invention, the working frequency is higher, the reliability is better, the thermal resistance is lower, and the electrical performance is good.

Description

technical field [0001] The invention belongs to the technical field of power device packaging, and in particular relates to a bidirectional switch power module and a preparation method thereof. Background technique [0002] As a third-generation semiconductor material, silicon carbide has excellent properties such as three times the band gap and thermal conductivity of silicon, and ten times the breakdown field strength of silicon. Therefore, it has higher voltage blocking capability, lower on-state voltage drop, higher switching speed, higher operating temperature and lower thermal resistance. Therefore, compared with silicon power devices, silicon carbide power devices have smaller conduction and switching losses, and have a higher operating temperature. Bidirectional switching power modules based on silicon carbide MOSFETs can have higher operating temperatures, higher packaging integration and higher reliability. [0003] A bidirectional switch, capable of controlling ...

AI Technical Summary

Problems solved by technology

[0004] However, the current matrix converter circuit is often built with discrete devices, with low integration, large volume, and low power density, and does not conform to the current development trend of modularization and integration in the direction of power electronics.

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