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A kind of manufacturing method of LED epitaxial wafer with improved brightness

A technology of LED epitaxial wafers and manufacturing methods, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low brightness of LED epitaxial wafers, hinder LED performance, and reduce energy-saving effects, so as to improve antistatic ability and crystal quality The effect of improving and increasing the concentration of wavelengths

Active Publication Date: 2022-07-22
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the brightness of the LED epitaxial wafer prepared by the existing LED epitaxial wafer production method is not high, which seriously hinders the improvement of LED performance and reduces the energy-saving effect of LED.
[0004] To sum up, there is an urgent need for a method of making LED epitaxial wafers with improved brightness to solve the problem of low brightness of LED epitaxial wafers in the prior art.

Method used

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  • A kind of manufacturing method of LED epitaxial wafer with improved brightness
  • A kind of manufacturing method of LED epitaxial wafer with improved brightness
  • A kind of manufacturing method of LED epitaxial wafer with improved brightness

Examples

Experimental program
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Embodiment 1

[0037] see figure 1 , a method of making an LED epitaxial wafer with improved brightness, wherein the AlN layer of the LED epitaxial wafer is provided with a raised cone, an aluminum region layer and a concave and inverted cone cavity which are arranged in sequence and cyclically. They are not connected to each other. The order of the cone, the aluminum region layer and the cone cavity described in the present invention is only used to emphasize the sequential position relationship when the three are arranged, not limited to the edge of the LED epitaxial wafer. body or aluminum area layer or conical cavity start or end;

[0038] The manufacturing method includes the following steps:

[0039] Step 3, making a plurality of raised cones 1.1 on the AlN layer 1 at intervals;

[0040] Step 4. A plurality of concave and inverted conical cavities 1.2 are formed on the AlN layer 1 at intervals, and the conical cavities 1.2 and the cones 1.1 are staggered and not connected to each oth...

Embodiment 2

[0057] The difference from Example 1 is that in step 3, D1 is 1000 nm, height H1 is 850 nm, and the shortest distance d1 between the bottom surfaces of adjacent cones 1.1 is 2100 nm. In step 4, D2 is 800 nm, and height H2 is 850 nm. The shortest distance d2 between the top surface of the conical cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 500 nm, and the thickness of the AlN layer 1 is 1800 nm.

Embodiment 3

[0059] The difference from Example 1 is that in step 3, D1 is 1100 nm, height H1 is 900 nm, and the shortest distance d1 between the bottom surfaces of adjacent cones 1.1 is 2200 nm. In step 4, D2 is 900 nm, and height H2 is 900 nm. The shortest distance d2 between the top surface of the conical cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 600 nm, and the thickness of the AlN layer 1 is 2000 nm.

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Abstract

The invention provides a method for manufacturing an LED epitaxial wafer with improved brightness. The AlN layer of the LED epitaxial wafer is provided with a raised cone, an aluminum region layer and a concave and inverted cone cavity which are arranged in sequence and cyclically. The three are not connected to each other; the manufacturing method includes the following steps, step 3, making a plurality of convex cones at intervals on the AlN layer; step 4, making a plurality of concave and inverted cone cavities at intervals on the AlN layer , the conical cavity and the cone are staggered and not connected to each other; step 5, make a plurality of aluminum area layers on the AlN layer at intervals, and each aluminum area layer is adjacent to the conical cavity and / or the cone; step 6 . Periodically growing a plurality of multiple quantum well light-emitting layers on the AlN layer. The invention can improve the brightness of the LED epitaxial wafer, enhance the antistatic ability, improve the wavelength concentration, and can also reduce the forward voltage of the LED epitaxial wafer.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for manufacturing an LED epitaxial wafer with improved brightness. Background technique [0002] LED epitaxial wafer is a solid-state light source, which is a light-emitting device made of semiconductor P-N junction. When the forward current is turned on, the minority carriers (ie electrons) and the majority carriers (ie holes) in the semiconductor recombine, and the released energy is emitted in the form of photons or partially in the form of photons. LED epitaxial wafer lighting has significant advantages such as high efficiency, energy saving, environmental protection and long service life, and has been widely used in street lamps, display screens, indoor lighting and automotive lights. Considering that luminous brightness is the most important measure of the competitiveness of LED epitaxial wafers, how to improve the brightness of LED epitaxial wafers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/22H01L33/005
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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