Photoelectric amplification integrated triode chip

A photoelectric amplification and photodiode technology, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of magnification that changes with ambient temperature, inability to take into account signal-to-noise ratio and bandwidth, and difficulty in processing circuits, and achieves transmission response speed. Fast, miniaturized, and high signal-to-noise ratio
CN113114196APending Publication Date: 2021-07-13GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
Publication Date
2021-07-13

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Abstract

The invention discloses a photoelectric amplification integrated triode chip, comprising a photodiode unit, which comprises a photodiode, and the photodiode comprises a PIN structure photodiode or a PN structure photodiode; a proportional current mirror unit which takes the P-type layer or the N-type layer of the photodiode unit as a substrate, whherein the photodiode unit is electrically connected with the proportional current mirror unit. According to the scheme, amplification of the light current of the photodiode unit is achieved through the proportional current mirror unit, current amplification with stable temperature can be achieved, extra current noise is not introduced, the signal-to-noise ratio is not reduced, and the high signal-to-noise ratio is maintained.
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Description

technical field

[0001] The invention relates to the field of photoelectric chips, in particular to a photoelectric amplification integrated triode chip. Background technique

[0002] Existing photon-type photodetectors are based on semiconductor chips with PN structure or PIN structure, which can convert light signals into current signals, and the maximum conversion rate is 1 photon corresponding to 1 electron. For example, the theoretical responsivity corresponding to 1550nm light wave is 1.25A / W. When the light energy is weak, such as about 0.1-10ฮผW, the corresponding photocurrent is relatively weak, which brings difficulty to the processing circuit of the subsequent stage, and cannot take into account the signal-to-noise ratio and bandwidth.

[0003] Existing photodetector devices with current amplification function mainly include APD based on avalanche effect and phototransistor based on triode effect, but they have two problems: one is that additional current noise is...

Claims

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