Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of ultraviolet LED epitaxy structure and preparation method thereof

An epitaxial structure, ultraviolet technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing cost, reducing reliability, immature violet LED epitaxial growth technology, etc., reducing the process and improving the overall reliability. , the effect of simplifying subsequent packaging steps

Active Publication Date: 2022-04-19
聚瑞芯光电有限公司
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the epitaxial growth technology of ultraviolet light LED is not mature enough. On the one hand, it is restricted by the characteristics of ultraviolet light growth materials, on the other hand, it is affected by the energy band structure and design structure of ultraviolet light LED, and is also limited by the influence of preparation and growth methods.
With the diversification of market demand for UV chip products, the demand for UV chips with various wavelengths such as 200-280nm, 350-360nm, and 380-395nm has obvious growth demand. The traditional application is to package multiple different chip wavelengths together. Due to the mixed effect, multi-wavelength chip packaging increases the cost and reduces the reliability. Therefore, how to prepare high-power composite wavelength ultraviolet LED chips has become a very urgent demand.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of ultraviolet LED epitaxy structure and preparation method thereof
  • A kind of ultraviolet LED epitaxy structure and preparation method thereof
  • A kind of ultraviolet LED epitaxy structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] see figure 1, this embodiment provides an ultraviolet LED epitaxial structure, including a substrate, and a low-temperature AlN layer, a high-temperature AlN layer, an intrinsic AlGaN layer, an n-type AlGaN layer doped with silane, and a doped n-doped AlGaN / AlN superlattice layer of heterosilane, quantum well region-1, superlattice SL region-1, quantum well region-2, superlattice SL region-2, quantum well region-3, supercrystalline Lattice SL region-3, quantum well region-n, superlattice SL region-n, p-type AlGaN layer and magnesium-doped p++ type BAlGaN layer.

[0087] In this embodiment, the thickness of the low-temperature AlN layer is 10 nm; the thickness of the high-temperature AlN layer is 200 nm;

[0088] The thickness of the typical AlGaN layer is 100nm; the thickness of the n-type AlGaN layer doped with silane is 200nm; the doping amount of silane is 10 20 ±1 cm 3 ;

[0089] The n-doped AlGaN / AlN superlattice layer doped with silane is composed of AlGaN an...

Embodiment 2

[0100] This embodiment provides an ultraviolet LED epitaxial structure, including a substrate, and a low-temperature AlN layer, a high-temperature AlN layer, an intrinsic AlGaN layer, an n-type AlGaN layer doped with silane, and a doped Silane n-doped AlGaN / AlN superlattice layer, quantum well region-1, superlattice SL region-1, quantum well region-2, superlattice SL region-2, quantum well region-3, superlattice SL region-3, quantum well region-n, superlattice SL region-n, p-type AlGaN layer and magnesium-doped p++ type BAlGaN layer.

[0101] In this embodiment, the thickness of the low-temperature AlN layer is 10 nm; the thickness of the high-temperature AlN layer is 200 nm;

[0102] The thickness of the typical AlGaN layer is 100nm; the thickness of the n-type AlGaN layer doped with silane is 100nm; the doping amount of silane is 10 20 ±1 cm 3 ;

[0103] The n-doped AlGaN / AlN superlattice layer doped with silane is composed of AlGaN and AlN alternately grown for 10 cycle...

Embodiment 3

[0114] This embodiment provides an ultraviolet LED epitaxial structure, including a substrate, and a low-temperature AlN layer, a high-temperature AlN layer, an intrinsic AlGaN layer, an n-type AlGaN layer doped with silane, and a doped Silane n-doped AlGaN / AlN superlattice layer, quantum well region-1, superlattice SL region-1, quantum well region-2, superlattice SL region-2, quantum well region-3, superlattice SL region-3, quantum well region-n, superlattice SL region-n, p-type AlGaN layer and magnesium-doped p++ type BAlGaN layer.

[0115] In this embodiment, the thickness of the low-temperature AlN layer is 10 nm; the thickness of the high-temperature AlN layer is 200 nm;

[0116] The thickness of the typical AlGaN layer is 100nm; the thickness of the n-type AlGaN layer doped with silane is 300nm; the doping amount of silane is 10 20 ±1 cm 3 ;

[0117] The n-doped AlGaN / AlN superlattice layer doped with silane is composed of AlGaN and AlN alternately grown for 10 cycle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ultraviolet LED epitaxial structure, which comprises a substrate, and a low-temperature AlN layer, a high-temperature AlN layer, an intrinsic AlGaN layer, an n-type AlGaN layer doped with silane, a silane-doped n-doped AlGaN / AlN superlattice layer, quantum well region-1, superlattice SL region-1, quantum well region-2, superlattice SL region-2, quantum well region-3, superlattice SL Region-3, quantum well region-n, superlattice SL region-n, p-type AlGaN layer and p++ type BAlGaN layer doped with magnesium, through the design and growth method of the present invention, can meet the requirements for various ultraviolet radiation in practical applications. The integration and unification of band requirements greatly simplifies the subsequent packaging steps, improves the overall reliability of the chip, and realizes the multi-purpose function of one chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronic information, and more specifically relates to an ultraviolet LED epitaxy structure and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, Traffic lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights, sterilization and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few LED products for purple light and deep ultraviolet light, mainly due to the difficulty in manufacturing high-power deep ultraviolet LEDs and low luminous e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/08H01L33/00
CPCH01L33/06H01L33/08H01L33/007
Inventor 王晓波
Owner 聚瑞芯光电有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com