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Dicing method for ultrathin wafer

A wafer and dicing technology, applied in the direction of fine working devices, electrical components, circuits, etc., can solve the problems of chipping and cracking of ultra-thin wafers, so as to reduce the possibility and reduce the probability of flying crystals. The effect of reducing cutting resistance

Pending Publication Date: 2021-07-27
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for scribing ultra-thin wafers to solve the problems of cracking and chipping of ultra-thin wafers in the prior art.

Method used

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  • Dicing method for ultrathin wafer
  • Dicing method for ultrathin wafer
  • Dicing method for ultrathin wafer

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Hereinafter, the embodiments of the present invention will be described below by way of specific embodiments, and those skilled in this specification can easily understand other advantages and efficacy of the present invention.

[0036] The present invention provides a method of dilating the ultra-thin wafer, such as Figure 1 to 3 Indicated.

[0037] This ultra-thin wafer is divided into the following steps:

[0038] Step 1: Post the wafer on the back of the wafer, put it in an oven at 60 ° C to 80 ° C for 10 to 30 minutes, ensuring that the wafer and the film have a delay, reducing the chip in the cutting process.

[0039] Step 2: Remove the wafer after the baking and naturally cooled to room temperature, followed by placing the wafer on the film side on the ceramic working dish of the tiling machine and turned on the vacuum.

[0040] Step 3: Install the scribe knife on the spindle spindle and complete the trick and test.

[0041] Step 4: Use the spindle speed 20000 ~ 4000...

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PUM

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Abstract

The invention relates to a dicing method for an ultrathin wafer. The dicing method is characterized in that that by utilizing a leapfrog dicing mode, the wafer is diced into large chip particles, the internal stress of the wafer is released, and then the large chip particles are diced into small particles until the particles are diced to be with a target size. The method is suitable for dicing the wafer with the thickness of 30-200 micrometers, the problem that the ultrathin wafer is prone to cracking and edge breakage is perfectly solved, the probability of crystal flying in the dicing process is reduced, the reject ratio of edge breakage of the diced front face and the diced back face of the ultrathin wafer is reduced, and the dicing efficiency of the ultrathin wafer is improved.

Description

Technical field [0001] The present invention belongs to the field of semiconductor chip manufacturing technology, and more particularly to a multi-wafer divide method. Background technique [0002] As the semiconductor wafer process has increased the demand for narrowing feature sizes and introducing full-size 3D integration, the thickness of the wafer towards the increasingly thin trend, and gradually enters the category of thickness within 50 μm. However, the cost of obtaining the thin wafer is to make them extremely fragile, because the depth thinning process and the rear end metallization process will apply additional stress to ultra-thin wafers, and bring a larger circulation. The risk, slightly inadvertently leads to wafer, cracks, etc., resulting in poor chips or even scrapped. [0003] The application number of 201310408770.5 discloses a 50 μm ultra-thin chip production method. After the wafer is thinned, the ladder mode is cut, that is, the first scribe knife is in cryst...

Claims

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Application Information

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IPC IPC(8): B28D5/02H01L21/78
CPCB28D5/02H01L21/78
Inventor 张迪邵俊永王战闫贺亮陈月涛
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD