Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof

A zinc oxide resistor, residual voltage ratio technology, applied in the direction of varistor, resistor manufacturing, varistor core, etc. The effect of low cost and simple method

Pending Publication Date: 2021-07-27
WUHAN NARI LIABILITY OF STATE GRID ELECTRIC POWER RES INST +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But it is worth noting that Al 3+ The more ions are added, the greater the leakage current, which leads to the deterioration of the comprehensive electrical performance of the zinc oxide resistor

Method used

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  • Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof
  • Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for preparing a zinc oxide resistance sheet 1 capable of reducing the residual voltage ratio, the steps are as follows:

[0035] a. Preparation of raw materials for zinc oxide resistors:

[0036] Calculate according to the mass percentage of components, adopt the following raw material formula to prepare raw materials:

[0037] ZnO: 87.825wt.%, Bi 2 o 3 : 3.8wt.%, Sb 2 o 3 : 1.7wt.%, Cr 2 o 3 : 1.2wt.%, MnO: 1.2wt.%, CoO: 2.4wt.%, SiO 2: 0.6wt.%, glass powder containing Ag and B: 1wt.%, Mg(AC) 2 : 0.25wt.%, Al(NO 3 ) 3 : 0.025wt.%;

[0038] b. Preparation of slurry:

[0039] b1. ZnO, Mg(AC) prepared in said step a 2 , Al(NO 3 ) 3 Mix it with deionized water to form a slurry, add it to the slurry tank and stir for 30 minutes, dry the mixed slurry and pulverize it into powder;

[0040] b2. The mixed powder material obtained in the step b1 is pre-calcined at a temperature of 950 ° C for 2 hours to promote part of the Al 3+ and Mg 2+ The ions penet...

Embodiment 2

[0055] The preparation method of the zinc oxide resistance sheet 2 that can reduce the residual voltage ratio, the steps are as follows:

[0056] a. Preparation of raw materials for zinc oxide resistors:

[0057] Calculate according to the mass percentage of components, adopt the following raw material formula to prepare raw materials:

[0058] ZnO: 87.575wt.%, Bi 2 o 3 : 3.8wt.%, Sb 2 o 3 : 1.7wt.%, Cr 2 o 3 : 1.2wt.%, MnO: 1.2wt.%, CoO: 2.4wt.%, SiO 2 : 0.6wt.%, glass powder containing Ag and B: 1wt.%, Mg(AC) 2 : 0.5wt.%, Al(NO 3 ) 3 : 0.025wt.%;

[0059] b. Preparation of slurry:

[0060] b1. ZnO, Mg(AC) prepared in said step a 2 , Al(NO 3 ) 3 Mix it with deionized water to form a slurry, add it to the material bucket and stir for 30 minutes, dry the mixed slurry and pulverize it into powder;

[0061] b2. The mixed powder material obtained in the step b1 is pre-calcined at a temperature of 950°C for 3 hours to promote part of the Al 3+ and Mg 2+ The ions pe...

Embodiment 3

[0076] The preparation method of the zinc oxide resistance sheet 3 that can reduce the residual voltage ratio, the steps are as follows:

[0077] a. Preparation of raw materials for zinc oxide resistors:

[0078] Calculate according to the mass percentage of components, adopt the following raw material formula to prepare raw materials:

[0079] ZnO: 85.372wt.%, Bi 2 o 3 : 4.2wt.%, Sb 2 o 3 : 2.3wt.%, Cr 2 o 3 : 1.0wt.%, MnO: 1.2wt.%, CoO: 2.4wt.%, SiO 2 : 1.0wt.%, glass powder containing Ag and B: 1wt.%, Mg(AC) 2 : 1.5wt.%, Al(NO 3 ) 3 : 0.028wt.%;

[0080] b. Preparation of slurry:

[0081] b1. ZnO, Mg(AC) prepared in said step a 2 , Al(NO 3 ) 3 Mix it with deionized water to form a slurry, add it to the material bucket and stir for 30 minutes, dry the mixed slurry and pulverize it into powder;

[0082] b2. The mixed powder material obtained in the step b1 is pre-calcined at a temperature of 1000 ° C for 3 hours to promote part of the Al 3+ and Mg 2+ The ions...

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Abstract

The invention discloses a zinc oxide resistor disc capable of reducing the residual voltage ratio and a preparation method of the zinc oxide resistor disc. The zinc oxide resistor disc is prepared through the four steps of preparation of raw materials of the zinc oxide resistor disc, preparation of slurry, preparation of a green body and sintering. According to the invention, Mg<2+> and Al<3+> ions are jointly infiltrated into ZnO crystal grains in a pre-calcining manner, and due to the fact that the particle size of the Mg<2+> ions is slightly smaller than that of Zn<2+> ions, tensile stress can be formed in ZnO crystal lattices, so that effective infiltration of the Al<3+> ions is promoted, enrichment of the Al<3+> ions near ZnO crystal boundaries is avoided, the Al<3+> ions are infiltrated into the ZnO crystal grains, the resistance of the ZnO crystal grains can be effectively reduced, the concentration of the Al<3+> ions in the crystal boundaries is reduced, the leakage current is not increased, and the residual voltage ratio and the residual voltage of the prepared zinc oxide resistor disc are effectively reduced; and the method is simple in process, easy to control and low in cost.

Description

technical field [0001] The invention relates to the technical field of resistance electrical components, in particular to a zinc oxide resistance sheet capable of reducing the residual voltage ratio and a preparation method thereof. Background technique [0002] Zinc oxide resistor is a semiconductor ceramic electrical protection element with excellent nonlinear current-voltage characteristics. Zinc oxide resistors are widely used in AC and DC high-voltage power transmission and transformation systems, power distribution systems, low-voltage integrated circuit systems, subway and electrified railway locomotive power supply systems, etc., and are used in parallel with the protected equipment. When the equipment is exposed to overvoltage, the impedance of the zinc oxide resistor will change from a nearly open circuit state to a highly conductive state, clamping the transient overvoltage to a safe level so that the protected equipment can operate safely. [0003] The size of t...

Claims

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Application Information

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IPC IPC(8): C04B35/453H01C7/112H01C17/00H01C17/28H01C17/30C04B35/622
CPCC04B35/453H01C7/112H01C17/00H01C17/28H01C17/30C04B35/622C04B2235/3298C04B2235/3294C04B2235/3241C04B2235/3262C04B2235/3275C04B2235/3418C04B2235/36C04B2235/449C04B2235/443C04B2235/608C04B2235/96
Inventor 曹伟万帅谷山强谭进任鑫姚政刘新杜雪松刘子皓王智凯
Owner WUHAN NARI LIABILITY OF STATE GRID ELECTRIC POWER RES INST
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