Cleaning liquid after chemical mechanical polishing and preparation method thereof
A cleaning solution and antioxidant technology, applied in the field of cleaning solution after chemical mechanical polishing and its preparation, can solve problems such as corrosion and poor biocompatibility, and achieve the effects of low corrosion rate, good stability and strong cleaning ability
Active Publication Date: 2021-07-30
SHANGHAI SINYANG SEMICON MATERIALS
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a cleaning solution after chemical mechanical polishing and its p...
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preparation example Construction
[0050] In the following examples and comparative examples, the preparation method of the cleaning solution includes the following steps: mixing the corresponding raw materials.
[0051] In the following examples, those that do not limit the specific operating temperature all refer to carrying out at room temperature.
[0052] Peptide A: reduced glutathione; peptide B: oxidized glutathione;
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The invention discloses a cleaning liquid after chemical mechanical polishing and a preparation method thereof. The cleaning liquid comprises the following raw material components in mass fraction: 0.01%-25% of alkali, 0.01%-30% of alcohol amine, 0.001%-1% of an antioxidant, 0.01%-0.1% of polypeptide, 0.01%-0.1% of amino acid, 0.01%-10% of a corrosion inhibitor, 0.01%-10% of a chelating agent, 0.01%-5% of a surfactant, 28.9-89.9% of water, based on 100% in total, wherein the amino acid is a combination of histidine and cysteine, and the polypeptide is reduced glutathione (peptide A) and oxidized glutathione (peptide B). The cleaning liquid is stronger in cleaning ability, is lower in corrosion rate, is stronger in BTA removal ability, is better in stability, and can realize the effects of cleaning, corrosion inhibition and BTA removal at the same time.
Description
technical field [0001] The invention relates to a cleaning liquid after chemical mechanical polishing and a preparation method thereof. Background technique [0002] Metal materials such as copper, aluminum, tungsten, etc. are commonly used wire materials in integrated circuits. Chemical Mechanical Polishing (CMP) has emerged as the primary technique for wafer planarization during device fabrication. Metal chemical mechanical polishing fluids usually contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-covered silicon dioxide, ceria, titanium dioxide, polymer abrasive particles, etc. After the metal CMP process, the surface of the wafer will be polluted by metal ions and abrasive particles in the polishing solution, which will affect the electrical characteristics of the semiconductor and the reliability of the device. The residue of ...
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CPCC23G1/16
Inventor 王溯马丽史筱超何加华王亮
Owner SHANGHAI SINYANG SEMICON MATERIALS
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