N-TOPCon solar cell, module and system, and method and equipment for preparing double-sided silicon oxide in cell
Pending Publication Date: 2021-07-30
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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[0004] The present invention ensures cleanliness while reducing procedures, solving the problem of many procedures in N-TOPCon, and enhancing the core competitiveness of N-TOPCon
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[0058] The modification method of the equipment for preparing double-sided silicon oxide of the present invention is relatively simple and easy to implement. It is only necessary to install ion sources on both sides of the chamber body of the silicon oxide preparation process chamber and ensure uniform gas in the chamber.
[0059] In one embodiment, the positions where the carrier 132 is used to place the N-type silicon 134 are all hollowed out except for the brackets to allow the N-type silicon to be coated on both sides at the same time.
[0060] In one embodiment, the first ion source 133 is aimed downward at the front side of the N-type silicon 134 to prepare a silicon oxide film on the front side, and the second ion source 135 is aimed upward at the back side of the N-type silicon to form a silicon oxide film on the front side. Prepare a tunnel oxide layer on the front side, wherein the power of the first ion source 132 is controlled to make the thickness of the silicon ox...
Embodiment 1
[0067] A kind of N-type passivation contact structure solar cell of the present embodiment, as Figure 10 As shown, from top to bottom, it includes front p+ metal electrode 10, front SiNx passivation anti-reflection film 8, front Al 2 o 3 Passivation film 7, front silicon oxide film 3, p+ doped region 2, n-type silicon substrate 1, tunnel oxide layer 2, back n+ doped region 6, back SiNx passivation film 9, back n+ metal electrode 11.
[0068] A method for preparing a solar cell with an N-type passivation contact structure in this embodiment comprises the following steps:
[0069] (1) Select N-type silicon 1 with a thickness of 150-170 μm, a resistivity of 0.3-2Ω·cm, and a size of 156.75mm×156.75mm as the substrate for double-sided texturing. The battery structure after this step is as follows figure 1 shown.
[0070] (2) Boron tribromide is used to diffuse boron on the front of the N-type silicon after the texturing treatment. The diffusion temperature is 850-1000°C, the ti...
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Abstract
The invention relates to an N-TOPCon solar cell, module and system, and a method and equipment for preparing double-sided silicon oxide in the N-TOPCon solar cell. The method comprises the steps of: S1, preparing a p + doped region on the front surface of the N-type silicon serving as a substrate; S2, preparing a silicon oxide film on the front surface of the N-type silicon, and preparing a tunneling oxide layer on the back surface of the N-type silicon; S3, preparing phosphorus-doped polycrystalline silicon on the back surface of the N-type silicon; and S4, preparing passivation films on the front surface and the back surface of the N-type silicon, and then printing metal electrodes. According to the method, the cleanliness is guaranteed, meanwhile, the working procedures are reduced, the problem that the number of N-TOPCon working procedures is large is solved, and the core competitiveness of N-TOPCon is enhanced.
Description
technical field [0001] The invention relates to the technical field of solar cells, in particular to a method and equipment for preparing double-sided silicon oxide from N-TOPCon solar cells, components, systems and cells. Background technique [0002] Tunneling oxide passivation contact (TOPCon) solar cell is a kind of N-type solar cell that has developed rapidly in recent years. The battery is characterized by the use of high-quality ultra-thin silicon oxide plus doped polysilicon layer to achieve high-efficiency passivation and selective carrier collection on the entire back of the battery, which can greatly increase the open circuit voltage and improve conversion efficiency. Ultra-thin silicon oxide is very A critical thin film that provides carrier selectivity. On the other hand, preparing a layer of silicon oxide before the aluminum oxide on the front side of the battery can not only chemically passivate the P+ surface, but also increase the amount of negative charges...
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