Method for removing trace silicon in high-concentration nickel sulfate solution

A nickel sulfate, high-concentration technology, applied in the direction of nickel sulfate, can solve the problem of incomplete silicon removal, achieve low equipment cost, realize recycling, and simple operation

Inactive Publication Date: 2021-08-06
CENT SOUTH UNIV
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for removing trace silicon in a high-concentration nickel sulfate solution, aiming to solve the incomplete silicon removal defect in the existing nickel sulfate refining process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing trace silicon in high-concentration nickel sulfate solution
  • Method for removing trace silicon in high-concentration nickel sulfate solution
  • Method for removing trace silicon in high-concentration nickel sulfate solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Place the beaker containing 200mL nickel-containing 120g / L nickel sulfate solution to be treated on the stirrer, adjust the stirrer to a speed of 300rpm, and add 3.6gAl while stirring 2 (SO 4 ) 3 , after reacting for 30 minutes, measure the pH value of the solution and adjust the pH value of the reaction solution to 5.0-5.1 with a certain concentration of NaOH solution by adding dropwise, and filter to obtain the purified nickel sulfate solution and silicon-removing slag, silicon-removing The results are shown in Table 1.

[0025] Table 1 Nickel sulfate solution removes silicon effect and nickel loss rate

[0026]

Embodiment 2

[0028] Place the beaker containing 200mL nickel-containing 85g / L nickel sulfate solution to be treated on the stirrer, adjust the stirrer to a speed of 300rpm, and add 4.0gAl while stirring 2 (SO 4 ) 3 , after reacting for 30 minutes, measure the pH value of the solution and adjust the pH value of the reaction solution to 5.2-5.3 with a certain concentration of NaOH solution by adding dropwise, and filter to obtain the purified nickel sulfate solution and silicon-removing slag, silicon-removing The results are shown in Table 2.

[0029] Table 2 Nickel sulfate solution silicon removal effect and nickel loss rate

[0030]

Embodiment 3

[0032] Place the beaker containing 200mL nickel-containing 106g / L nickel sulfate solution to be treated on the stirrer, adjust the stirrer to a speed of 300rpm, and add 3.6gAl while stirring 2 (SO 4 ) 3 , after reacting for 30 minutes, measure the pH value of the solution and adjust the pH value of the reaction solution to 5.2-5.3 with a certain concentration of NaOH solution by adding dropwise, and filter to obtain the purified nickel sulfate solution and silicon-removing slag, silicon-removing The results are shown in Table 3.

[0033] Table 3 Nickel sulfate solution silicon removal effect and nickel loss rate

[0034]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for deeply removing trace silicon in a high-concentration nickel sulfate solution, which adopts aluminum sulfate as a precipitator and non-ionic polyacrylamide (NAPM) as a flocculant to construct an Al2 (SO4) 3-NAPM composite system to realize deep removal of trace silicon, and the silicon content in the obtained nickel sulfate purified solution can be reduced to below 1mg/L, leached filtrate obtained after acid pickling of the silicon removal slag can be returned for silicon removal, and recycling of the silicon removal agent aluminum salt is achieved. The method is excellent in silicon removal effect and low in nickel loss, the adopted silicon removal agent is low in price and easy to obtain, operation is easy, and industrialization is easy to achieve.

Description

technical field [0001] The invention relates to the technical field of solution removal of impurities, in particular to a method for deep removal of silicon from a nickel sulfate solution. Background technique [0002] Nickel sulfate is a common nickel salt with a wide range of applications. Electroplating-grade nickel sulfate is used in the electroplating industry and battery industry. It is the main nickel salt for electroplating nickel and chemical nickel; battery-grade nickel sulfate is important for the production of ternary precursors One of the raw materials. [0003] Due to the different nickel-containing raw materials, the technical process for producing nickel sulfate is also different, but the mainstream wet process in the nickel industry is: the nickel-containing raw material is acid-leached and then hydrolyzed to remove iron and aluminum, and the liquid after removing iron and aluminum is removed by solvent extraction to remove manganese, magnesium, Calcium, co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G53/10
CPCC01G53/10
Inventor 曾理王曼张贵清巫圣喜关文娟李青刚曹佐英
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap