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Preparation method of transition metal Cr intercalated chalcogenide magnetic compound

A technology of magnetic compounds and transition metals, which is applied in the field of spintronics, can solve the problems of material use temperature limitations, achieve the effect of lowering the ferromagnetic transition temperature and widening the use temperature

Active Publication Date: 2021-08-13
HENAN INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention proposes a preparation method of a transition metal Cr intercalated chalcogenide magnetic compound, which solves the current problem of Cr 1 / 3 Nb 2 The problem that the temperature of the material is limited

Method used

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  • Preparation method of transition metal Cr intercalated chalcogenide magnetic compound
  • Preparation method of transition metal Cr intercalated chalcogenide magnetic compound

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Experimental program
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Effect test

Embodiment 1

[0024] (1) Mixed raw material powder: Cr element 0.20g, Nb element 0.63g, S element 1.40g, raw material powder purity can be 99.9% and above, the whole process is operated in an inert gas glove box filled with Ar gas, and the water in the glove box The content of oxygen and oxygen is not more than one ten-millionth (≤0.1 ppm) to avoid air pollution;

[0025] (2) Transport agent: use TeBr 4 As a delivery agent, put 30mg;

[0026] (3) Encapsulation of quartz tubes: Use acetylene flames for quartz tube encapsulation operations. During the encapsulation process, the pressure display value of the oxygen pressure relief valve is 0.1Mpa, and the pressure of the acetylene gas pressure relief valve is 0.05Mpa;

[0027] (4) Sintering molding: sintering in a tube-type resistance furnace with dual temperature zones, the raw materials are placed at the high temperature end, the high temperature zone rises to 935°C after 1440 minutes, the low temperature zone rises to 870°C after 1440 minu...

Embodiment 2

[0029] (1) Mixed raw material powder: 0.23g of Cr element, 0.70g of Nb element, and 1.35g of S element. The purity of the raw material powder can be 99.9% or above. The whole process is operated in an inert gas glove box filled with Ar gas. The water in the glove box The content of oxygen and oxygen is not more than one ten-millionth (≤0.1 ppm) to avoid air pollution;

[0030] (2) Transport agent: use TeBr 4 As a delivery agent, put 35mg;

[0031] (3) Encapsulation of quartz tubes: Use acetylene flames for quartz tube encapsulation operations. During the encapsulation process, the pressure display value of the oxygen pressure relief valve is 0.15Mpa, and the pressure of the acetylene gas pressure relief valve is 0.06Mpa;

[0032] (4) Sintering molding: sintering in a tubular resistance furnace with dual temperature zones, the raw materials are placed at the high temperature end, the high temperature zone is raised to 950°C after 1440 minutes, the low temperature zone is raise...

Embodiment 3

[0034] (1) Mixed raw material powder: Cr element 0.22g, Nb element 0.60g, S element 1.50g, raw material powder purity can be 99.9% or above, the whole process is operated in an inert gas glove box filled with Ar gas, and the water in the glove box The content of oxygen and oxygen is not more than one ten-millionth (≤0.1 ppm) to avoid air pollution;

[0035] (2) Transport agent: use TeBr 4 As a delivery agent, put 45mg;

[0036] (3) Encapsulation of quartz tubes: Use acetylene flames for quartz tube encapsulation operations. During the encapsulation process, the pressure display value of the oxygen pressure relief valve is 0.20Mpa, and the pressure of the acetylene gas pressure relief valve is 0.07Mpa;

[0037] (4) Sintering molding: sintering in a tube-type resistance furnace with dual temperature zones. The raw materials are placed on the high temperature side. After 1440 minutes, the high temperature zone is raised to 940°C, and after 1440 minutes, the low temperature zone ...

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Abstract

The invention provides a preparation method of a transition metal Cr intercalated chalcogenide magnetic compound, which comprises the following specific steps: (1) mixing raw material powder: fully grinding high-purity Cr powder, Nb powder and S powder in an inert gas glove box, uniformly mixing, and putting into a quartz tube; (2) putting a transport agent, namely putting TeBr4 powder into the quartz tube in the step (1); (3) packaging the quartz tube: taking out the quartz tube obtained in the step (2) from the glove box, and burning out and sealing the quartz tube with acetylene flame; and (4) sintering and molding: sintering and molding the quartz tube sealed in the step (3) in a double-temperature-zone tubular furnace. TeBr4 is used as a transport agent to prepare the sample, and the growth environment of the material is changed, so that the insertion positions of Cr atoms of an intercalation layer are different, the ferromagnetic transition temperature of the sample is greatly reduced, and the use temperature of the material as a nonvolatile spin device is widened.

Description

technical field [0001] The invention relates to the technical field of spintronics, in particular to a preparation method of a transition metal Cr intercalated chalcogen magnetic compound. Background technique [0002] With the development of miniaturization and high integration of electronic devices, the traditional micro-nano electronics based on manipulating the degree of freedom of electronic charge encounters severe challenges such as heat dissipation and stability. Information technology in the post-Moore era needs a new foundation . Magnetoelectronics (spintronics) based on manipulating the degree of freedom of the spin of the charge has used the spin properties of electrons on the basis of traditional electronics to obtain spintronic devices with rich functions. Among them, the giant magnetoresistance effect materials discoveries and their applications. In recent years, people have used the non-trivial geometric phase of electrons to generate novel topological stat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G53/11
CPCC01G53/11C01P2006/42Y02E40/60
Inventor 毛乾辉侯鹏辉李瑞雪党雅洁
Owner HENAN INST OF ENG