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Intelligent reversible photosensitive femtosecond laser photoresist and photoetching processing method

A technology of femtosecond laser and lithography processing, which is applied in the direction of optics, optomechanical equipment, photoplate making process of pattern surface, etc., can solve the problems of unstable suppression effect, etc., and achieve sensitivity improvement, high nonlinear absorption capacity, high The effect of photolithographic precision

Pending Publication Date: 2021-08-13
ZHEJIANG LAB +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this mechanism, the photosensitizer has been excited to the excited state in advance, and some excited state photosensitizers will directly trigger the photochemical reaction in the photoresist, resulting in unstable inhibition effect

Method used

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  • Intelligent reversible photosensitive femtosecond laser photoresist and photoetching processing method
  • Intelligent reversible photosensitive femtosecond laser photoresist and photoetching processing method
  • Intelligent reversible photosensitive femtosecond laser photoresist and photoetching processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] In the yellow light chamber, mix and stir the reversible photoinitiator A-1 and resin B-1 according to the ratio of experiment 1 and experiment 2 in the following table 1; after filtering out impurities with a filter membrane, an intelligent reversible photosensitive femtosecond laser light is obtained. Engraving.

[0043](1) Take the intelligent femtosecond laser photoresist composition and drop it on a 2-inch silicon wafer, and use a homogenizer to spin-coat to prepare a photoresist film. The homogenization process adopts a programmed speed increase, specifically: 100 rpm for 10 s, 500 rpm for 10 s, and 1500 rpm for 60 s.

[0044] (2) Expose the photoresist by superimposing a ring-shaped continuous laser with a femtosecond laser, wherein the wavelength λ1 is 300nm; the wavelength λ2 is 700nm, the laser pulse of the femtosecond laser is preferably 80fs, and the repetition frequency is preferably 60MHz.

[0045] (3) Develop the exposed silicon wafer in γ-butyrolactone ...

Embodiment 2

[0048] In the yellow light chamber, mix and stir the reversible photoinitiator A-2 and resin B-2 evenly according to the ratio of experiment 3 and experiment 4 in the following table 1; after filtering out impurities with a filter membrane, an intelligent reversible photosensitive femtosecond laser light is obtained. Engraving.

[0049] (1) Take the intelligent femtosecond laser photoresist composition and drop it on a 2-inch glass plate, and use a homogenizer to spin-coat to prepare a photoresist film. The homogenization process adopts a programmed speed increase, specifically: 10s at 500 rpm, 10s at 2000 rpm, and 120s at 5000 rpm.

[0050] (2) Expose the photoresist by superimposing a ring-shaped continuous laser with a femtosecond laser, wherein the wavelength λ1 is 440nm; the wavelength λ2 is 800nm. The laser pulse of the femtosecond laser is preferably 100fs, and the repetition frequency is preferably 80MHz.

[0051] (3) Develop the exposed glass sheet in propylene glyco...

Embodiment 3

[0054] In the yellow light chamber, mix and stir the reversible photoinitiator A-1 / A-2 composition and resin B-2 according to the ratio of experiment 5 and experiment 6 in the following table 1; filter out impurities with a filter membrane to obtain an intelligent reversible Photosensitive femtosecond laser photoresists.

[0055] (2) Take the intelligent femtosecond laser photoresist composition and drop it on a 2-inch quartz plate, and use a homogenizer to spin-coat to prepare a photoresist film. The homogenization process adopts a programmed speed increase, specifically: 1000 rpm for 10 s, 4000 rpm for 10 s, and 8000 rpm for 120 s.

[0056] (2) Expose the photoresist by superimposing a ring-shaped continuous laser with a femtosecond laser, the middle wavelength λ1 is 550nm; the wavelength λ2 is 1000nm, the laser pulse of the femtosecond laser is preferably 120fs, and the repetition frequency is preferably 100MHz.

[0057] (3) Develop the exposed quartz plate in isopropanol ...

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Abstract

The invention discloses an intelligent reversible photosensitive femtosecond laser photoresist and a photoetching processing method. The intelligent reversible photosensitive femtosecond laser photoresist is characterized in that the intelligent reversible photosensitive femtosecond laser photoresist comprises a reversible photoinitiator which has reversible photosensitivity, and under the stimulation of a light source with the wavelength of 350-550 nm, the reversible photoinitiator can be subjected to structural conformation transformation, loses the nonlinear absorption capacity for femtosecond laser with the wavelength of 700-1000 nm and becomes inactive, so that the photochemical reaction of the photoresist is controlled, and higher photoetching precision is obtained; and the intelligent reversible photosensitive femtosecond laser photoresist is prepared from 0.1-6 wt% of a reversible photoinitiator A and 94-99.9 wt% of resin B.

Description

technical field [0001] The invention relates to the field of photosensitive materials and micro-nano processing, and more specifically, to an intelligent reversible photosensitive femtosecond laser photoresist and a photolithographic processing method. Background technique [0002] Femtosecond laser photoresist is a new type of photosensitive material that uses the non-linear absorption effect of photoresist on femtosecond laser two-photon or multi-photon to trigger a photochemical reaction inside the photoresist, thereby changing its solubility. Femtosecond laser lithography can realize direct writing inside the photoresist, and prepare any three-dimensional micro-nano structure at one time. However, due to the limitation of Abbe's diffraction limit, the accuracy of femtosecond laser lithography is limited by the wavelength of femtosecond laser, and the optimal processing feature size is generally above 100nm, which hinders the wide application of femtosecond laser in the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/027
CPCG03F7/027
Inventor 匡翠芳曹春沈小明邱毅伟黄宁刘旭
Owner ZHEJIANG LAB
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