Composite materials and their preparation methods, quantum dot light emitting diode
A technology of quantum dot luminescence and composite materials, which is applied in the field of composite materials and its preparation, and can solve problems such as unfavorable hole transport, poor hole conductivity, and low hole transport efficiency
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[0038] The preparation method of the composite material of one embodiment, comprises the following steps:
[0039] S10, forming a semiconductor material on the substrate.
[0040] Among them, the substrate plays the role of carrying the semiconductor material. The substrate here is not limited to the conventional QLED substrate. For example, when the QLED is an upright structure, the anode can be used as the substrate; when the QLED is an inverted structure, the organic light-emitting layer can be used as the substrate.
[0041]The semiconductor material can be formed on the substrate using solution deposition methods.
[0042] Further, the average particle size of the semiconductor material ranges from 1 nm to 100 nm.
[0043] Further, the semiconductor material is selected from at least one of transition metal sulfide and transition metal selenide.
[0044] Further, the semiconductor material is selected from MoS 2 , WS 2 , MoSe 2 with WSe 2 at least one of them.
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Embodiment 1
[0071] A transparent conductive film ITO with a thickness of 50 nm was used as the anode;
[0072] PEDOT:PSS was deposited on the anode by solution method to form a hole injection layer with a thickness of 30 nm;
[0073] Solution Deposition of MoS on the Hole Injection Layer 2 Quantum dots, forming a hole transport layer precursor with a thickness of 30 nm;
[0074] The hole transport layer precursor was dripped with perfluorooctyltrimethoxysilane solution, then baked at 70°C for 1.5h, and then the surface was washed with toluene to form a hole transport layer;
[0075] ZnCdS / ZnS quantum dots were deposited by solution method on the hole transport layer to form a quantum dot light-emitting layer with a thickness of 30 nm;
[0076] ZnMgO was deposited by solution method on the quantum dot light-emitting layer to form an electron transport layer with a thickness of 40 nm;
[0077] Ag was deposited on the electron transport layer by vapor deposition to form a cathode having a...
Embodiment 2
[0079] A transparent conductive film ITO with a thickness of 50 nm was used as the anode;
[0080] PEDOT:PSS was deposited on the anode by solution method to form a hole injection layer with a thickness of 30 nm;
[0081] Solution Deposition of MoS on the Hole Injection Layer 2 Quantum dots, forming a hole transport layer precursor with a thickness of 30 nm;
[0082] The hole transport layer precursor was dripped with perfluorooctyltriethoxysilane solution, then baked at 70°C for 1.5h, and then the surface was washed with toluene to form a hole transport layer;
[0083] ZnCdS / ZnS quantum dots were deposited by solution method on the hole transport layer to form a quantum dot light-emitting layer with a thickness of 30 nm;
[0084] ZnMgO was deposited by solution method on the quantum dot light-emitting layer to form an electron transport layer with a thickness of 40 nm;
[0085] Ag was deposited on the electron transport layer by vapor deposition to form a cathode having a ...
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