Unlock instant, AI-driven research and patent intelligence for your innovation.

Rectifier Triggering Techniques

A rectifier and rectified voltage technology, applied in the direction of converting AC power input to DC power output, emergency protection circuit devices for limiting overcurrent/overvoltage, and output power conversion devices, etc., can solve problems such as invalidity

Pending Publication Date: 2021-08-13
ARM LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, the measures of ESD protection devices (with ESD trigger voltage and hold voltage) can be relatively ineffective when far from the working voltage level

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rectifier Triggering Techniques
  • Rectifier Triggering Techniques
  • Rectifier Triggering Techniques

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Various embodiments described herein refer to rectifier triggering schemes and techniques. For example, the various schemes and techniques described herein can provide a capacitor-coupled (CC) diode-triggered (DT) silicon-controlled rectifier (SCR) that effectively implements an optimized trigger circuit, making the SCR an efficient ESD (ESD) protection devices to support and protect integrated circuits (ICs) from ESD surges at the chip level. In some embodiments, a CC-DT-SCR may have favorable area and leakage benefits, as well as less susceptibility to false triggering under excessive noise and latch-up (LU) injection. Various embodiments described herein can provide various useful triggering schemes and techniques to increase immunity to various noise and latch-up (LU) conditions while maintaining its ESD performance.

[0012] This article will refer to Figure 1A-5 Various implementations of rectifier triggering schemes and techniques are described in detail.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a rectifier trigger technique. Various implementations described herein are related to a device having switching circuitry that provides a rectified voltage when triggered. The device may include diode circuitry coupled in series with charge storage circuitry. The diode circuitry and the charge storage circuitry may operate to trigger the switching circuitry. The diode circuitry may include one or more diodes, and the charge storage circuitry may include at least one charge storage component.

Description

technical field [0001] The present disclosure relates to a rectifier trigger technology. Background technique [0002] This section is intended to provide information relevant to understanding the various technologies described in this article. As the title of this section implies, this is a discussion of prior art and in no way should it be implied that it is prior art. In general, related art may or may not be considered prior art. It should be understood, therefore, that any statement in this section shall be based on this and should not be construed as any admission of prior art. [0003] In some electronic architectures, electrostatic discharge (ESD) can refer to electrical surges between charged components in integrated circuits (ICs). In some scenarios, ESD may occur through electrical contacts, which may result in ESD-induced defects (eg, electrical shorts, dielectric breakdown, etc.). Small-scale ESD events can cause damage to highly sensitive electronic compone...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/155H02M1/06H02M1/32
CPCH02M7/1555H02M1/06H02M1/32H02H9/046H02H9/02H02H1/0007H01L27/0262H05K13/00H02H9/04
Inventor 塞沙基里·拉奥·博吉法布瑞思·布朗克
Owner ARM LTD