Fluorescence emission method for directionally enhancing MoS2 through gap cavity of double nano antennas

A nano-antenna, directional enhancement technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., to achieve the effect of enhancing signal strength

Active Publication Date: 2021-08-17
CAPITAL NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of fluorescent emission method that double nano-antenna gap cavity directionally enhances MoS2, to solve the

Method used

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  • Fluorescence emission method for directionally enhancing MoS2 through gap cavity of double nano antennas
  • Fluorescence emission method for directionally enhancing MoS2 through gap cavity of double nano antennas
  • Fluorescence emission method for directionally enhancing MoS2 through gap cavity of double nano antennas

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Example Embodiment

[0035] Example 1

[0036] This embodiment provides a fluorescence emission method of a dual nano antenna gap chamber oriented MOS2, comprising preparing silver nanowires, respectively, a silicon-silicon substrate carrying monolithiconized molybdenum; then drops silver nanowires in a single Layered silicon sulfide wafers on the silicon wafer; then selectish molybdenum hydride with a double nano antenna.

[0037] Preferably, the preparation method of molybdenum sulfide sulfide, comprising the steps of:

[0038] (1) From the sample box, the molybdenum block material is removed from the sample box, and the molybdenum block material is fixed with a tweezers, placed in the surface center of the tape with viscous surface, and then folded multiple times in the sample; At this time, not to produce air bubbles between the sample and the tape, and it is necessary to tear the tape.

[0039] (2) Take another tape, attach the tape viscous surface with step (1), and then paste the rubber strip s...

Example Embodiment

[0049] Example 2

[0050] This embodiment provides a semiconductor material comprising a silicon-silicon substrate carrying a single layer of molybdenum sulfide and a silver nanowire disposed on a single layer of molybdenum sulfide, wherein the silver nanowire has a diameter of 50 nm to 500 nm and a length of 1um. -30 um.

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Abstract

The invention provides a fluorescence emission method for directionally enhancing MoS2 through a gap cavity of double nano antennas. The method comprises the following steps: respectively preparing a silver nanowire and a silicon wafer substrate loaded with a single layer of molybdenum disulfide; dripping the silver nanowire on the silicon wafer substrate loaded with the single-layer molybdenum disulfide; and then selecting molybdenum disulfide with double nano antennas. According to the method provided by the invention, on one hand, light emitted by the molybdenum disulfide film can be directionally scattered by the nano antenna, and loss caused by non-directional emission is avoided; on the other hand, exciting light can be highly localized by utilizing a gap of the double nanowires, gap plasmas can be excited, and when the gap plasmas are attenuated, light with other wavelengths can be released to be matched with the fluorescence peak position of molybdenum disulfide, so that the fluorescence of molybdenum disulfide is greatly enhanced through the Purcell effect.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for directional enhancement of fluorescence emission of MoS2 by double nano-antenna gap cavities. Background technique [0002] In recent years, the research on transition metal chalcogenide two-dimensional semiconductor materials has attracted extensive attention from the outside world. These two-dimensional materials have common characteristics, there is a strong covalent bond interaction in the plane, and the weak van der Waals force connects the plane and the plane, so the advantage can prepare a monolayer film at the atomic thickness level. As a result, atomic thin films of transition metal chalcogenides are emerging as a new system for studying exciton-plasmon coupling, and monolayer MoS2 exhibits fluorescence (PL) in the visible light band as its direct bandgap. Compared with zero- and one-dimensional emitters, monolayers exhibit great flexibility and funct...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/68G02B5/00B22F1/00B22F9/24B82Y30/00B82Y40/00
CPCC09K11/025C09K11/681G02B5/008B22F9/24B82Y30/00B82Y40/00B22F1/0547B22F1/07
Inventor 王培杰尤卿章李泽张利胜方炎
Owner CAPITAL NORMAL UNIVERSITY
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