Metal arsenic crystal deiodination method
A metal arsenic and crystal technology, applied in the fields of metallurgical technology and material science and engineering, can solve the problems of uneven quality, poor separation selectivity, uneven quality of arsenic crystal surface and core, and achieve the effect of reducing adverse effects
Active Publication Date: 2021-08-17
CENT SOUTH UNIV
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Problems solved by technology
[0004] The iodine in the metal arsenic crystal prepared by the iodine modulation method is distributed in the overall crystal structure. Among them, the iodine located in the deep part is difficult to remove. In addition, the residual iodine in the gas phase is easy to condense on the surface of the arsenic crystal, which is easy to cause removal. The effect is unsatisfactory, and it leads to uneven arsenic crystal surface and nucleus quality; secondly, the arsenic crystal is easy to destroy the original arsenic crystal surface structure during the processing process; the separation selectivity for metal arsenic and iodine is poor, and the separation process is easy to cause metal arsenic To solve problems such as changes in phase structure and uneven quality, the present invention provides the following technical solutions:
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Embodiment 1
[0056] Bake the special core-shell material at 120°C for 2 hours and put it into a quartz tube with a filling amount of 20%, preheat it at 300°C for 1 hour, and then put the deiodination raw material metal arsenic crystal into it.
[0057] During the deiodination process, the reaction temperature (temperature control temperature in the annealing zone) was set to 400°C, 300°C, and 200°C respectively, and the temperature at the collection end (temperature control temperature in the condensation zone) was not heated (due to the small size of the reaction chamber and the thermal Diffusion exists, the actual measured temperature is about 140°C, 100°C, 70°C), and the reaction time is 1h.
[0058] The iodine content test was done on the surface depth, and the results are shown in Table 1.
[0059] Table 1
[0060]
[0061] It can be found that by adopting the method of the present invention, especially at 300-400°C, a good deiodination effect can be obtained, and the quality unif...
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Abstract
The invention discloses a method for efficiently removing residual iodine in a metal arsenic crystal. The method comprises the following steps: adding a special activated carbon core-shell material into a closed container, annealing the iodine-containing metal arsenic crystal to be treated in a specific temperature control system, and synchronously carrying out condensation treatment in an annealing atmosphere; under the condition of maintaining the crystal structure and form of As, the separation selectivity of arsenic and iodine is effectively improved, and the ultra-high-purity antioxidant metal arsenic crystal can be obtained.
Description
technical field [0001] The invention belongs to the fields of metallurgical technology, material science and engineering, and relates to a method for efficiently removing iodine from metal arsenic crystals. Background technique [0002] The unique physical and chemical properties of arsenic have gradually shown great potential in the research and development of high-performance materials. Its main raw material application form is high-purity metal arsenic. The methods for preparing high-purity arsenic include vacuum metallurgy and its improved method (Chinese patent CN101054168, Chinese patent CN101935767A), chlorination reduction method and its improved method (Chinese patent CN101144125, Chinese patent CN104975191A, Chinese patent CN103184354A), but the prepared metal arsenic has a complex structure and serious degree of twinning. Among the methods for preparing arsenic single crystals, the current relatively advanced method is contained in the patent CN111455460A, which ...
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IPC IPC(8): C30B29/02C30B33/02C30B33/00
CPCC30B29/02C30B33/02C30B33/00
Inventor 梁彦杰邓方杰刘振兴杨志辉彭聪赵飞平周元康丽周艺伟
Owner CENT SOUTH UNIV