Display memory based on phase change material

A phase-change material and phase-change storage technology, which is applied in the field of functional semiconductors, can solve the problems of inconvenient large-area preparation of display units and cumbersome color rendering methods, and achieve the effects of low power consumption, fast conversion speed, and flexible form

Pending Publication Date: 2021-08-20
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this display unit is not convenient for large-scale preparation, and the color rendering method is relatively cumbersome, and it needs to be realized by different arrangements and combinations of multi-layer phase change materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Display memory based on phase change material
  • Display memory based on phase change material
  • Display memory based on phase change material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]The glass substrate is ultrasonically cleaned in acetone, ethanol, and deionized water respectively, fixed on the substrate tray and placed in a magnetron sputtering equipment, and sputtered to form a transparent conductive material: the target material is ITO target material, the sputtering power supply is RF power supply, and the power density 3W / cm 2 , the atmosphere is pure argon, the pressure is 0.3Pa, and the sputtering time is 60min, the ITO conductive film with a smooth surface is obtained, the thickness is 100-200nm, and the measured surface resistance is 5-50Ω / cm 2 .

Embodiment 2

[0038] Formation of VO by sputtering on glass substrates sputtered with transparent conductive materials 2 Thin film: the target material is vanadium trioxide (V 2 o 3 ) target, the sputtering power supply adopts DC power supply, and the power density is 2.5W / cm 2 , the atmosphere is pure argon, the pressure is 1.5Pa, the sputtering time is 15min, and then vacuum annealed at 450°C for 5min to obtain VO with a smooth surface. 2 Thin film, the thickness of which is 50-100nm.

Embodiment 3

[0040] in VO 2 Aluminum silicate (Al x SiO y ) Ion-conducting layer film: the target material is aluminum silicate target material, the sputtering power supply is radio frequency power supply, and the power density is 2.5W / cm 2 , the atmosphere is pure argon, the pressure is 2.0Pa, and the room temperature sputtering time is 45 minutes, the aluminum silicate (Al x SiO y )film. The resulting aluminum silicate (Al x SiO y ) film thickness is 100-200nm, and the light transmittance between 380-760nm is greater than 85%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a display memory based on a phase-change material. The display memory based on the phase-change material is composed of display storage elements, electric control elements and memory storage elements, wherein the display storage elements are arranged periodically, and the electric control elements and the memory storage elements are connected to the display storage elements. Each display storage element structurally comprises a first transparent electrode layer, a phase change storage layer, an ion conduction layer, a phase change display layer and a second transparent electrode layer in sequence; and the component of the phase change storage layers is VO2.

Description

technical field [0001] The invention relates to a display-storage integrated device based on a phase-change material and a preparation method thereof, which are mainly used for phase-change storage and intelligent display, and belong to the technical field of functional semiconductors. Background technique [0002] Phase-change memory PCM uses the difference in resistivity between the two states (crystalline and amorphous) of phase-change materials to realize the storage of data "0" and "1". Compared with the current mainstream flash memory, phase change memory is considered to be one of the most promising non-volatile memories because of its simple manufacturing process, low power consumption, strong data storage ability and many other advantages. [0003] The current high-performance system puts forward higher requirements for the storage density and area size of the phase change memory. Due to the leakage current of the phase change unit and the large Reset current requir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00H01L27/24G02F1/15G02F1/153G02F1/155G02F1/163
CPCG02F1/15G02F1/153G02F1/155G02F1/163H10B63/80H10N70/231H10N70/8833
Inventor 曹逊贾汉祥邵泽伟黄爱彬金平实季晓炜
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap