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Nano water ion cluster generator

An ion group and generator technology, applied in electrical components and other directions, can solve the problems of large device size, low refrigeration efficiency, and reduced release amount, and achieve the effects of increased bonding strength, increased release amount, and increased release amount.

Active Publication Date: 2021-08-24
HANGZHOU DAZHAN ELECTROMECHANICAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) Poor structural stability: thermoelectric grains, P / N type semiconductor grains or Peltier refrigeration units are electrically connected to the discharge electrode and exposed to the outside air. Since the discharge electrode has a certain length, it is under the leverage effect Under the influence of external factors, it is easy to be damaged by the impact of external factors, causing the P / N type semiconductor grain to break, fall off or break, and the structural stability is poor, which greatly increases the defective rate of the product.
[0004] (2) The efficiency of the device is low: it needs to be refrigerated to below the air dew point temperature, and the heat conduction and electrical conduction resistance of the Peltier refrigeration unit is large, the refrigeration efficiency is low, and the use cost and power consumption are increased.
[0005] (3) Opposed electrodes or high-voltage electrodes need to be installed, not only the size of the device is large, but also the charged particles are adsorbed to reduce their release: due to the thermoelectric grains, P / N type semiconductor grains or Peltier refrigeration units and discharge The electrodes are electrically connected, and high voltage cannot be applied to the discharge electrodes at the same time, which will cause the cooling effect of the thermoelectric grains to decrease, or even be damaged by high voltage breakdown
The opposite electrode or high-voltage electrode needs to be set up to apply high voltage to form a high-voltage electric field, thereby greatly increasing the size of the device
At the same time, the opposite electrode or high-voltage electrode is generally loaded with high voltage or grounded, and it is easy to absorb charged particles generated by the electron avalanche effect, which greatly reduces its release and limits its application scenarios.
[0006] (4) Unstable condensed water: In an air environment with high temperature or extremely low humidity (such as relative humidity less than 15%), the dew point temperature is extremely low, and it is difficult for thermoelectric grains or Peltier refrigeration units to condense and obtain condensed water under these conditions , leading to a decrease in the release of nano-water ions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] see Figure 1-3 , a nanometer water ion group generator according to an embodiment of the present invention, its main components include: a heat absorbing member 2, an N-type semiconductor crystal grain 7A, a P-type semiconductor crystal grain 7B, a heat sink 8, a blocking member 3, and a high-voltage power supply 5 and substrate 1.

[0046] As a further description of this embodiment, at least one pair of P / N type semiconductor crystal grains 7, the paired P / N type semiconductor crystal grains 7 are composed of P type semiconductor crystal grains 7B and N type semiconductor crystal grains 7A, the P One end of the / N-type semiconductor crystal grain 7 is a cooling end, which is used to obtain a temperature lower than the environment under the action of the thermoelectric effect, that is, cooling capacity; the other end of the P / N-type semiconductor crystal grain 7 is a heating end, which is used for In order to obtain the temperature higher than the environment under t...

Embodiment 2

[0067] The difference with embodiment 1 is: see Figure 4 , what this embodiment adopts is the ionizer II6, and the ionizer II6 is a water-absorbing material, and the water-absorbing material is made of a porous medium, and the porous medium is made of a fiber molded body, or a plurality of organic and / or inorganic fibers, so The water-absorbing material is used to absorb, accumulate or accumulate the cold, condensed water or moisture in the air 11 with high relative humidity, and at the same time form a multi-channel discharge path.

[0068] In this embodiment, the ionizer II6 is thermally coupled to the barrier 3 to absorb or accumulate cold, condensed water, or moisture in the air 11 with high relative humidity on the barrier 3, while reducing the The temperature of the ionization part II6 is to further form an air environment with high relative humidity in and around the ionization part II6.

[0069] The end of the ionizer II6 away from the barrier 33 is an ionization end...

Embodiment 3

[0072] The difference with embodiment 1 is: as Figure 5 As shown, there is a specified distance between the ionizer II6 and the barrier member 33, so that condensed water or high relative humidity air 11 is sufficiently formed between the ionizer II6 and the barrier member 3 to absorb , accumulating or accumulating condensed water on the barrier 3 or moisture in the air 11 with high relative humidity.

[0073] The high-voltage power supply 5 is electrically coupled to the ionizer II 6 through wires.

[0074] see Figure 8 , In addition, in order to support and fix the ionizing part II6, the ionizing part II6 is connected with a fixing part 12, and the fixing part 12 can be connected to the substrate 1 to achieve the effect of supporting and fixing the ionizing part II6.

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PUM

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Abstract

The invention belongs to the field of disinfection, epidemic prevention and healthy air, and particularly relates to a nano water ion group generator. The generator comprises at least one pair of P / N type semiconductor crystal grains, wherein the paired P / N type semiconductor crystal grains are composed of P type semiconductor crystal grains and N type semiconductor crystal grains, one end of each P / N type semiconductor crystal grain is a refrigeration end, and the other end of each P / N type semiconductor crystal grain is a heating end; a heat absorption piece which is used for obtaining the cold energy generated by the refrigeration end and transmitting the cold energy to the blocking piece; a blocking piece which is used for conducting the cooling capacity obtained by the heat absorption piece so as to obtain condensate water or air with high relative humidity; an ionization piece which is arranged on one side of the blocking piece to absorb, gather or accumulate moisture in cold energy, condensate water or high-relative-humidity air, is electrically coupled to the high-voltage power supply and is used for loading a high-voltage electric field so as to ionize air and moisture around the ionization piece under the action of an electron avalanche effect, and obtain at least one nano-particle-size substance of charged particles and oxygen-containing free radicals.

Description

technical field [0001] The invention belongs to the fields of disinfecting, epidemic prevention and healthy air, and in particular relates to a nanometer water ion group generator. Background technique [0002] Due to many advantages such as biological activity, small particle size, strong penetration ability, stable performance, sterilization, and odor removal, nanometer water ions have attracted more and more attention. Existing nano water ion generator or device still has the following deficiencies: [0003] (1) Poor structural stability: thermoelectric grains, P / N type semiconductor grains or Peltier refrigeration units are electrically connected to the discharge electrode and exposed to the outside air. Since the discharge electrode has a certain length, it is under the leverage effect Under the influence of external factors, it is easy to be damaged by the impact of external factors, causing the P / N type semiconductor crystal grain to break, fall off or break, and the...

Claims

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Application Information

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IPC IPC(8): H01T23/00
CPCH01T23/00H10N10/17H10N10/13A61L9/22
Inventor 唐峰吴泽滨袁超代星杰
Owner HANGZHOU DAZHAN ELECTROMECHANICAL TECH CO LTD
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