A kind of growth method and application of high-temperature phase lanthanum borosilicate crystal

A growth method and crystal growth technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of difficult to obtain high temperature phase, small crystal size, etc., and achieve the effect of wide use

Active Publication Date: 2022-05-27
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In summary, LaBSiO 5 The current problems of crystals are: (1) The crystal size is too small; (2) Due to the phase transition problem, it is difficult to obtain high temperature phase
These problems make LaBSiO 5 Crystals have limitations in the development of macroscopic properties and their application in the field of optoelectronic devices

Method used

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  • A kind of growth method and application of high-temperature phase lanthanum borosilicate crystal
  • A kind of growth method and application of high-temperature phase lanthanum borosilicate crystal
  • A kind of growth method and application of high-temperature phase lanthanum borosilicate crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1: Spontaneous Nucleation Growth of β-La 0.92 Eu 0.08 BSiO 5 crystal

[0038] According to (La 0.92 Eu 0.08 )BO 3 :LiMoO 4 :SiO 2 :B 2 O 3 =0.2:0.75:0.05:0.05(mol) ratio for ingredients, weigh La 2 O 3 , Eu 2 O 3 , H 3 BO 3 , SiO 2 , Li 2 CO 3 and MoO 3 Wait for the raw materials, fully grind and mix the raw materials with a total weight of 20g in an agate mortar and mix them evenly, put them into a platinum crucible, and then transfer them to a high-temperature molten salt furnace. The melt reacted completely, and then dropped to 800°C at a cooling rate of 120°C / day. After the crystal growth was completed, it was rapidly annealed to room temperature, and the crystal was taken out, washed and dried to obtain transparent β-La 0.92 Eu 0.08 BSiO 5 The single crystal is about 1.5mm in size, and its phase can be determined to be a high temperature phase by X-ray diffraction technology.

Embodiment 2

[0039] Example 2: Spontaneous Nucleation Growth of β-La 0.9 Nd 0.1 BSiO 5 crystal

[0040] According to (La 0.9 Nd 0.1 )BO 3 :LiMoO 4 :SiO 2 :B 2 O 3 =0.1:0.8:0.1:0.025(mol) ratio for ingredients, weigh La 2 O 3 , Nd 2 O 3 , H 3 BO 3 , SiO 2 , Li 2 CO 3 and MoO 3 Wait for the raw materials, fully grind and mix the raw materials with a total weight of 30g in an agate mortar and mix them evenly, put them into a platinum crucible, and then transfer them to a high-temperature molten salt furnace. The melt was completely reacted, and then lowered to 750°C at a cooling rate of 240°C / day. After the crystal growth was completed, it was rapidly annealed to room temperature. The crystal was taken out, washed and dried to obtain transparent β-La 0.9 Nd 0.1 BSiO 5 The single crystal is about 1.6mm in size, and its phase can be determined to be a high temperature phase by X-ray diffraction technology.

Embodiment 3

[0041] Example 3: Spontaneous Nucleation Growth of β-La 0.8 Nd 0.2 BSiO 5 crystal

[0042] According to (La 0.8 Nd 0.2 )BO 3 :LiMoO 4 :SiO 2 :B 2 O 3 =0.22:0.7:0.08:0.055(mol) ratio for ingredients, weigh La 2 O 3 , Nd 2 O 3 , H 3 BO 3 , SiO 2 , Li 2 CO 3 and MoO 3 Wait for the raw materials, fully grind and mix the raw materials with a total weight of 25g in an agate mortar and mix them evenly, put them into a platinum crucible, and then transfer them to a high-temperature molten salt furnace. The melt was completely reacted, and then lowered to 850°C at a cooling rate of 360°C / day. After the crystal growth was completed, it was rapidly annealed to room temperature. The crystal was taken out, washed and dried to obtain transparent β-La. 0.8 Nd 0.2 BSiO 5 The single crystal is about 1.8mm in size, and its phase can be determined to be a high temperature phase by X-ray diffraction technology.

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Abstract

The invention discloses a method for growing a high-temperature phase lanthanum borosilicate crystal. The high-temperature phase lanthanum borosilicate crystal is β-La 1‑ y ln y BSiO 5 The crystal is prepared by a high-temperature flux method, and the compound flux system used is: (La 1‑y ln y )BO 3 ‑LiMoO 4 ‑SiO2 2 -B 2 o 3 , in the system (La 1‑y ln y )BO 3 、LiMoO 4 , SiO 2 and B 2 o 3 The mole percentage of x 1 、x 2 、x 3 、x 4 , where 0 <x 1<0.3，0.7≤x 2 <1，0 <x3<0.3,x 1 +x 2 +x 3 = 1,x 1 :x 4 =2:1~4:1. The present invention solves the problem of β-LaBSiO caused by phase transition 5 The problem of crystal growth is difficult. The crystal does not undergo phase transition during the annealing process and can exist stably at room temperature. It is a kind of optical functional material and has a wide range of applications in laser, terahertz and other fields. < / x

Description

technical field [0001] The invention relates to the field of optoelectronic functional materials, in particular to the application of a growth method of a high temperature phase lanthanum borosilicate crystal. Background technique [0002] LaBSiO 5 It is a new type of rare earth-based composite salt photofunctional crystal, which has both the structural properties of borates and silicates, and has potential research value in the fields of ferroelectrics, piezoelectricity, nonlinearity and lasers. High temperature phase LaBSiO 5 It is unstable at room temperature and undergoes transformation from the high temperature phase (β-LaBSiO) when annealed to 412K. 5 ) to the low temperature phase (α-LaBSiO 5 ) transition, which is accompanied by drastic stress release, resulting in the large-scale high-temperature phase LaBSiO 5 The difficulty of single crystal growth severely limits the basic research and performance development of this crystal. [0003] Leonyuk et al with K 2...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B9/12C30B29/34C09K11/79
CPCC30B29/34C30B9/12C09K11/778C09K11/7797C30B19/062C30B19/02C30B33/02H10K85/351
Inventor 李凌云施艺黄发铮周子伟李信旭于岩
Owner FUZHOU UNIV
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