Infrared detector pixel structure and infrared detector

Abstract

The invention relates to an infrared detector pixel structure and an infrared detector. The infrared detector pixel structure comprises a substrate, a first structure layer and a second structure layer, wherein the first structure layer and the second structure layer are arranged in sequence; the first structure layer comprises at least two beam structures, the beam structures are connected with the middle supporting structure and the micro-bridge columns, in beam paths from the middle supporting structure to the corresponding micro-bridge columns, the two parallel beam structures intersecting at the same node are a first half-bridge structure and a second half-bridge structure respectively, and the first half-bridge structure and the second half-bridge structure form a thermal symmetry structure; the length of the first half-bridge structure is larger than that of the second half-bridge structure, the thickness of the first half-bridge structure is larger than that of the second half-bridge structure in the direction perpendicular to the substrate, and the micro-bridge column is of a solid column structure; the first structure layer comprises a first electrode layer, the second structure layer comprises a second electrode layer and a thermosensitive layer, and the second electrode layer is electrically connected to the micro-bridge column through the first electrode layer. The infrared detector pixel structure can improve the detection performance of the infrared detector.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to an infrared detector pixel structure and an infrared detector. Background technique [0002] The working principle of the infrared detector is to convert the received infrared radiation signal into a thermal signal, then convert the thermal signal into an electrical signal, and then output the electrical signal after processing. Parameters such as the noise equivalent temperature difference of the infrared detector and the background noise of the infrared detector directly affect the performance of the infrared detector. [0003] Among the current infrared detectors, the detection performance of the infrared detector is poor due to the absorption rate of the infrared detector to the target temperature radiation energy, the total thermal conductivity, and its own resistance. Contents of the invention [0004] In order to solve the above technical problems or at least...

AI Technical Summary

Problems solved by technology

[0003] In the current infrared detectors, the detection performance of the infrared detector is poor due to the absorption rate of the infrared detector to the target temperature radiation energy, the total thermal conductivity and its own resistance.

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