Maskless photoetching optimization method based on OPC model

A technology of maskless lithography and optimization method, which is applied in the field of maskless lithography optimization based on the OPC model, can solve problems such as low efficiency and time-consuming, reduce calculation costs, reduce operating costs, and solve gradient disappearance Effect

Pending Publication Date: 2021-09-07
矽万(上海)半导体科技有限公司 +1
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Problems solved by technology

[0009] 3. The current OPC method of laser scanning lithography is mostly optimized for a single exposure point one by one, which is inefficient and time-consuming

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  • Maskless photoetching optimization method based on OPC model
  • Maskless photoetching optimization method based on OPC model
  • Maskless photoetching optimization method based on OPC model

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Embodiment Construction

[0059]Embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be noted that the implementations involved in this specification are not exhaustive, and do not represent the only implementations of the present invention. The following corresponding examples are only for clearly illustrating the content of the invention of the patent of the present invention, and are not intended to limit its implementation. For those of ordinary skill in the art, on the basis of the description of this embodiment, various changes and modifications can also be made, and any obvious changes or modifications that belong to the technical concept and inventive content of the present invention are also included in the present invention. within the scope of protection.

[0060] As shown figure 1 Shown is a flow chart of the OPC model-based maskless lithography optimization method of the present invention. An OPC model-based maskless photo...

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Abstract

The invention provides a maskless photoetching optimization method based on an OPC model. The maskless photoetching optimization method comprises the following steps of: S1, obtaining an optimized photoresist function model according to photoresist exposure data and a photoresist chemical reaction function; S2, constructing a self-adaptive imaging model according to the parameters of a photoetching machine, a target pattern and the photoresist function model; S3, constructing a first cost function and a constraint condition by taking the numerical value of the target pattern as a pixelated numerical value of a wafer circuit board diagram, and updating the numerical value of the exposure dose distribution of the target pattern according to the constraint condition; and S4, constructing a second cost function and a constraint condition by taking the numerical value of the reverse exposure energy distribution as the numerical value of the exposure energy distribution, and further updating the numerical value of the exposure dose distribution of the target pattern according to the constraint condition. The optimization method disclosed by the invention is small in calculation amount, simple in setting and capable of carrying out parallel optimization on global exposure points according to requirements.

Description

technical field [0001] The invention relates to the technical field of optical proximity correction in photolithography resolution enhancement technology, in particular to a maskless photolithography optimization method based on an OPC model. Background technique [0002] Photolithography is a key process in integrated circuit (IC) manufacturing, accounting for about half of production costs. The fabrication, maintenance, and use of the exposure infrastructure, as well as the fabrication and consumption of masks, entail significant costs. Consequently, maskless lithography processes that bypass mask production, such as scanning electron beam lithography and ion beam lithography, have been developed and used commercially. [0003] As a cost-effective maskless lithography scheme, scanning laser lithography has a relatively simple system structure and working method, and improvements in scanning methods and positioning methods have greatly improved the practicability of the me...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36G03F7/70441
Inventor 彭飞桂成群宋毅薛兆丰
Owner 矽万(上海)半导体科技有限公司
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